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Wafer backgrinding

Known as: Backlap, Wafer thinning 
Wafer backgrinding is a semiconductor device fabrication step during which wafer thickness is reduced to allow for stacking and high density… Expand
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Papers overview

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Highly Cited
2010
Highly Cited
2010
Pre-bond test is preferred for a three-dimensional integrated circuit (3D IC), since it reduces stacking yield loss and thus… Expand
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Review
2009
Review
2009
Today's miniaturization and performance requirements result in the usage of high-density integration and packaging technologies… Expand
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Highly Cited
2009
Highly Cited
2009
High frequency characterization and modeling of Through Silicon Vias (TSVs) for new 3D chip staking are presented in this paper… Expand
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Review
2008
Review
2008
An overview of wafer-level three-dimensional (3D)) integration technology is provided. The basic reasoning for pursuing 3D… Expand
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2008
2008
This paper presents several key technologies developed for high density 3D integration by circuit stacking, i.e. with an inter… Expand
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Highly Cited
2006
Highly Cited
2006
A three-dimensional (3-D) integration technology has been developed for the fabrication of a new 3-D shared-memory test chip… Expand
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Highly Cited
2006
Highly Cited
2006
Using standard single damascene type techniques on bulk-Si, combined on one hand with extreme wafer thinning and on the other… Expand
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2006
2006
This paper characterizes die damage resulting from various wafer thinning processes. Die fracture strength is measured using ball… Expand
2005
2005
Abstract Sediments of the mid‐Pliocene (c. 3.4–3.0 Ma) Tangahoe Formation exposed in cliffs along the South Taranaki coastline of… Expand
2004
2004
A through-silicon via (TSV) process provides a means of implementing complex, multichip systems entirely in silicon, with a… Expand
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