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Pre-bond test is preferred for a three-dimensional integrated circuit (3D IC), since it reduces stacking yield loss and thus… Expand Today's miniaturization and performance requirements result in the usage of high-density integration and packaging technologies… Expand High frequency characterization and modeling of Through Silicon Vias (TSVs) for new 3D chip staking are presented in this paper… Expand An overview of wafer-level three-dimensional (3D)) integration technology is provided. The basic reasoning for pursuing 3D… Expand This paper presents several key technologies developed for high density 3D integration by circuit stacking, i.e. with an inter… Expand A three-dimensional (3-D) integration technology has been developed for the fabrication of a new 3-D shared-memory test chip… Expand Using standard single damascene type techniques on bulk-Si, combined on one hand with extreme wafer thinning and on the other… Expand This paper characterizes die damage resulting from various wafer thinning processes. Die fracture strength is measured using ball… Expand Abstract Sediments of the mid‐Pliocene (c. 3.4–3.0 Ma) Tangahoe Formation exposed in cliffs along the South Taranaki coastline of… Expand A through-silicon via (TSV) process provides a means of implementing complex, multichip systems entirely in silicon, with a… Expand