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Urea nitrogen^4H dwell specimen:SCnc:Pt:Dial fld prt:Qn

Known as: Urea nitrogen^4 hours dwell specimen:Substance Concentration:Point in time:Peritoneal dialysis fluid:Quantitative, Urea nitrogen [Moles/volume] in Peritoneal dialysis fluid --4 hour dwell specimen, Üre azotu^4Sa beklemi? hasta örne?i:SubKons:Zml?:Diyal sv prt:Kant 
 
National Institutes of Health

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CarbonyldiamideChemical procedureDialysis SolutionsNitrogen
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2019
2019
Interfacial treatment of 4H SiC/SiO 2 interface by shallow boron ion implantation
 
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2017
2017
Pharmacokinetics and Clinical Outcomes of Generic Tacrolimus (Hexal) Versus Branded Tacrolimus in De Novo Kidney Transplant Patients: A Multicenter, Randomized Trial
Background Scrupulous comparison of the pharmacokinetic and clinical characteristics of generic tacrolimus formulations versus… Expand
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2016
2016
Depth Profile of Doping Concentration in Thick (> 100 μm) and Low-Doped (< 4 × 1014 cm-3) 4H-SiC Epilayers
The depth profiles of n-type doping concentration in thick (>100 μm) and low-doped (< 4 × 1014 cm-3) 4H-SiC epilayers grown by… Expand
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2016
2016
Experimental Durability Testing of 4H SiC JFET Integrated Circuit Technology at 727 Degrees Centigrade
We have reported SiC integrated circuits (ICs) with two levels of metal interconnect that have demonstrated prolonged operation… Expand
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2015
2015
Improved Clival Gate 4H-SiC MESFET with Recessed Drain Drift Region and Recessed P-Buffer Layer
An improved clival gate 4H-SiC MESFET with recessed drain drift region and recessed p-buffer layer (RDRPCG MESFET) was proposed… Expand
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2012
2012
Enfoque bidimensional para la estabilidad del tratamiento de ortodoncia
espanolLa retencion es probablemente la fase mas delicada del tratamiento de ortodoncia. Conseguir la estabilidad del resultado… Expand
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Review
2005
Review
2005
RETENCION ESCOLAR: CONCEPCIONES Y PROCESOS IMPLICADOS EN ACTIVIDADES TUTORIALES EN LA ESCUELA MEDIA
El objeto de esta linea de investigacion es el de documentar elementos favorecedores del aprendizaje y la inclusion de los… Expand
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2001
2001
An implanted-emitter 4H-SiC bipolar transistor with high current gain
An epi-base, implanted-emitter, npn bipolar transistor which showed a maximum common emitter current gain (/spl beta/) of /spl… Expand
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1997
1997
900 V DMOS and 1100 V UMOS 4H-SiC power FETs
While the advantages of SiC power MOSFETs (both UMOS and DMOS type structures) are known, processing issues have prevented these… Expand
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1983
1983
The chemistry of 4-diazoimidazole and 4H-imidazolylidene /
 
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