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Topological insulator
Known as:
Insulator
, Topological insulators
In the bulk of a non-interacting topological insulator, the electronic band structure resembles an ordinary band insulator, with the Fermi level…
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Related topics
Related topics
11 relations
Bismuth antimonide
Bismuth selenide
Bismuth telluride
Copper zinc antimony sulfide
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2008
Highly Cited
2008
High-performance InGaZnO thin-film transistors with high-k amorphous Ba0.5Sr0.5TiO3 gate insulator
Jungbae Kim
,
C. Fuentes-Hernandez
,
B. Kippelen
2008
Corpus ID: 118619386
We report on high-performance n-channel thin-film transistors (TFTs) fabricated using amorphous indium gallium zinc oxide (a-IGZO…
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Highly Cited
2006
Highly Cited
2006
A New Metal–Ferroelectric$(hboxPbZr_0.53hboxTi_0.47hboxO_3)$–Insulator$(hboxDy_2hboxO_3)$–Semiconductor (MFIS) FET for Nonvolatile Memory Applications
T. P. Juan
,
C. Chang
,
J.Y. Lee
IEEE Electron Device Letters
2006
Corpus ID: 6843402
Metal–ferroelectric–insulator–semiconductor (MFIS) field-effect transistors with<tex>$hboxPb(hboxZr_0.53, hboxTi_0.47)hboxO_3…
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Highly Cited
2001
Highly Cited
2001
Emission lifetime of polarizable charge stored in nano-crystalline Si based single-electron memory
B. Hinds
,
T. Yamanaka
,
S. Oda
2001
Corpus ID: 11668702
The lifetime of the emission of a single electron stored in a nanocrystalline Si (nc-Si) dot has been studied in order to…
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Highly Cited
1999
Highly Cited
1999
Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers
F. Gámiz
,
J. Roldán
,
P. Cartujo-Cassinello
,
J. E. Carceller
,
J. A. López-Villanueva
,
S. Rodríguez
1999
Corpus ID: 17945332
Inversion-layer mobility has been investigated in extremely thin silicon-on-insulator metal–oxide–semiconductor field-effect…
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Highly Cited
1998
Highly Cited
1998
Properties of Ferroelectric Memory FET Using Sr2(Ta, Nb)2O7 Thin Film
Y. Fujimori
,
Takashi Nakamura
,
A. Kamisawa
1998
Corpus ID: 56112555
Compounds of the Sr2Nb2O7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field effect…
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Highly Cited
1997
Highly Cited
1997
Synthesis of carbon nitride films at low temperatures
P. Hammer
,
M. Baker
,
C. Lenardi
,
W. Gissler
1997
Corpus ID: 46680196
Carbon nitride films (CNx) have been deposited by sputtering a graphite target with nitrogen ions. Films were grown both with and…
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Highly Cited
1993
Highly Cited
1993
Superconducting millimeter wave oscillators and SIS mixers integrated on a chip
V. Koshelets
,
A. Shchukin
,
S. Shitov
,
L. Filippenko
IEEE transactions on applied superconductivity
1993
Corpus ID: 22518351
All-refractory material superconducting millimeter-wave oscillators have been designed and investigated experimentally with…
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Highly Cited
1991
Highly Cited
1991
Single-mode polymer waveguide modulator
Ray T. Chen
,
L. Sadovnik
,
T. Jannson
,
J. Jannson
1991
Corpus ID: 52107053
We report herein the first single‐mode polymer waveguide modulator which can be formed on any surface regardless of its…
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Highly Cited
1989
Highly Cited
1989
Effect of Hydrophobicity on Insulator Performance
J. Kindersberger
,
M. Kuhl
1989
Corpus ID: 140011784
1988
1988
Silicon-on-insulator and buried metals in semiconductors
J. Sturm
,
Chenson Chen
,
L. Pfeiffer
,
P. Hemment
1988
Corpus ID: 136855063
The symposium presented in this book reported on key developments for overcoming limiting problems with various SOI and SOS…
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