Safe operating area

Known as: Second breakdown, SOA, FBSOA 
For power semiconductor devices (such as BJT, MOSFET, thyristor or IGBT), the safe operating area (SOA) is defined as the voltage and current… (More)
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Papers overview

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2016
2016
Superjunction (SJ) Si-MOSFET power transistors have a larger active volume and thus a higher heat capacitance than wide-bandgap… (More)
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2009
2009
Established methods for testing ESD robustness of high-voltage pins in smart power CMOS can lead to erroneous results. This paper… (More)
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2008
2008
A retrograded doping profile(RDP) is directly introduced into the lateral diffused channel region for an insulated gate bipolar… (More)
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2006
2006
The safe operating area (SOA) of GaAs-based heterojunction bipolar transistors has been studied considering both the self-heating… (More)
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2006
2006
The total safe operating area (SOA) of LDMOS transistors is discussed. It is shown that the transistors are subjected to… (More)
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2005
2005
Lateral DMOS transistors are widely used in mixed-signal IC circuit designs, particularly where power handling is important. This… (More)
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2005
2005
A new 6.5 kV IGBT module is presented. This module, using high voltage soft-punch-through technology exhibits an exceptionally… (More)
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2004
2004
An analytical on-state breakdown model for high voltage RESURF LDMOS has been proposed in this paper. The model considers the… (More)
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1999
1999
This paper deals with the measurement and prediction of the SOA boundary and the accompanying device physics. Results are given… (More)
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1977
1977
  • S. P. Gaur
  • IEEE International Solid-State Circuits…
  • 1977
OPERATION OF BIPOLAR transistors in high-power circuits is limited due to second breakdown failure mode in forward ( IB > 0, VCE… (More)
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