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Quantum heterostructure

Known as: Quantum material 
Quantum heterostructure is a heterostructure in a substrate (usually a semiconductor material), where size restricts the movements of the charge… 
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Related topics

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Quantum dotQuantum wellQuantum wire

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Filter-Free Narrowband Photodetectors Employing Colloidal Quantum Dots
Tuning the electronic bandgap of quantum dots via the quantum size-effect enables the tailored spectral response of quantum dot… 
2017
2017
In-situ optical characterisation of the spatial dynamics of liquid crystalline nanocomposites
Ben Hogan*, Sergey Dyakov, Samuel Rault, Jenny O'Dowd, Yuri Gun’ko, Tatiana Perova, Monica Craciun and Anna Baldycheva**. 1… 
2017
2017
Numerical methods for large-scale quantum material simulations
2016
2016
Extremely Scalable Algorithm for 108-atom Quantum Material Simulation on the Full System of the K Computer
An extremely scalable linear-algebraic algorithm was developed for quantum material simulation (electronic state calculation… 
2010
2010
Characterization of interface trap density of In-rich InGaAs nMOSFETs with ALD Al2O3 as gate dielectric
In this paper, we characterize the interface properties of In-rich In<inf>0.65</inf>Ga<inf>0.35</inf>As and In<inf>0.75</inf>Ga… 
Review
2009
Review
2009
Investigation of hot electrons and hot phonons generated within an AlN/GaN high electron mobility transistor
We review our recent results obtained on an AlN/GaN-based high-electron-mobility transistor. The temperature of the electrons… 
2005
2005
Interfacial charge transfer excitation with large optical nonlinearity in manganite heterostructure
Takuya Satoh,1 Kenjiro Miyano,1 Yasushi Ogimoto,1,2 Hiroharu Tamaru,1,3 and Sumio Ishihara4 1Research Center for Advanced Science… 
2005
2005
Interfacial charge transfer excitation with large optical nonlinearity in manganite heterostructure
2003
2003
SCANNING PROBE MICROSCOPY OF SEMICONDUCTOR HETEROSTRUCTURES
Atomic, electronic, and optoelectronic properties of semiconductor heterostructures are studied using scanning tunneling and near… 
1998
1998
Fabrication of silicon nanowires
2 at 750 °C and 850 °C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope… 
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