Process variation (semiconductor)

Process variation is the naturally occurring variation in the attributes of transistors (length, widths, oxide thickness) when integrated circuits… (More)
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Topic mentions per year

1997-2017
0102019972017

Papers overview

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2010
2010
Leakage power is becoming the dominant power domponent in deep submicron technology and stability of the data storage of SRAM… (More)
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2010
2010
The trend towards multi-/many- core design has made network-on-chip (NoC) a crucial component of future microprocessors. With… (More)
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Highly Cited
2009
Highly Cited
2009
Aggressive supply voltage scaling to below the device threshold voltage provides significant energy and leakage power reduction… (More)
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Highly Cited
2009
Highly Cited
2009
Dynamic Random Access Memory (DRAM) has been used in main memory design for decades. However, DRAM consumes an increasing power… (More)
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2008
2008
In this paper, we model on-chip signaling over a bus consisting of encoding, drivers, transmission lines, receivers and decoding… (More)
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2008
2008
Reducing leakage in memories is critical to reduce static power consumption in nanometric technologies. A wide-spread technique… (More)
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2004
2004
This work presents a low-jitter pulsewidth control loop (PWCL) circuit. A mutual-correlated scheme is implemented to adjust the… (More)
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Highly Cited
2004
Highly Cited
2004
Due to process parameter variations, a large variability in circuit delay occurs in scaled technologies affecting the yield. In… (More)
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2004
2004
We propose in this paper a new CMOS integrated amplitude shift-keying (ASK) demodulator dedicated for implantable electronic… (More)
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Highly Cited
2000
Highly Cited
2000
High-variety production like mass customization is facing the challenge of effective variety management, which needs to deal with… (More)
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