Plasma-enhanced chemical vapor deposition

Known as: PECVD, Plasma Enhanced Chemical Vapor Deposition, Plasma deposition process 
Plasma-enhanced chemical vapor deposition (PECVD) is a process used to deposit thin films from a gas state (vapor) to a solid state on a substrate… (More)
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Topic mentions per year

Topic mentions per year

1981-2018
05010019812018

Papers overview

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2015
2015
The development of low-thermal-budget Ge-on-Si epitaxial growth for the fabrication of low-cost Ge-on-Si devices is highly… (More)
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Review
2007
Review
2007
Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low… (More)
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2007
2007
The plasma-enhanced chemical vapor deposition of aluminum-doped zinc oxide has been demonstrated for the first time at 800Torr… (More)
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2007
2007
Plasma-enhanced chemical vapor deposition phosphorus-doped silicon oxynitride SiON layers with a refractive index of 1.505 were… (More)
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2007
2007
Summary form only given. In this paper, atmospheric pressure plasma enhanced chemical vapor deposition AP-PECVD) process has been… (More)
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2007
2007
The thin-film transistor liquid crystal display (TFT-LCD) industry has in recent years demanded ever-larger- area substrate… (More)
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2007
2007
Silicon oxynitride (SiOxNy:H) layers were grown from 2%SiH4/N2 and N2O gas mixtures by plasma-enhanced chemical vapor deposition… (More)
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2001
2001
Recently, hafnium, and zirconium silicates have been considered to be attractive for new materials with high permittivity We have… (More)
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1999
1999
The introduction of new in situ sensing creates the possibility of directly controlling critical process variables in plasma… (More)
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1990
1990
A dry planarization process utilizing plasma-enhanced chemical vapor deposition (PECVD) of amorphous carbon (a-C:H) films has… (More)
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