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Plasma-activated bonding

Known as: Plasma activated bonding 
Plasma-activated bonding is a derivative, directed to lower processing temperatures for direct bonding with hydrophilic surfaces. The main… 
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Related topics

Related topics

9 relations
Bond characterizationChemical-mechanical planarizationDirect bondingIndium tin oxide

Broader (1)

Wafer bonding

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Indium zinc oxide mediated wafer bonding for III–V/Si tandem solar cells
Silicon-based tandem solar cells are desirable as a high efficiency, economically viable approach to one sun or low concentration… 
2010
2010
Surface and Interface Characterization of Sequentially Plasma Activated Silicon , Silicon dioxide and Germanium Wafers for Low Temperature Bonding Applications
This article reports the sequentially plasma activated bonding (SPAB) of n–Ge with p–Si and SiO2 at low temperature. Surface… 
2010
2010
Sequential Plasma-Activated Bonding Mechanism of Silicon/Silicon Wafers
To investigate the sequentially plasma-activated bonding (SPAB) mechanism of silicon/silicon wafers, the surface hydrophilicity… 
2010
2010
Sequentially Plasma Activated Bonding for Wafer Scale Nano-Integration
Sequentially plasma activated bonding (SP AB) of silicon wafers has been investigated to facilitate chemical free, room… 
2010
2010
A novel room-temperature wafer direct bonding method by fluorine containing plasma activation
This paper demonstrates a novel and simple wafer direct bonding method using fluorine containing plasma activation for Si to Si… 
2007
2007
Plasma-activated wafer bonding: the new low-temperature tool for MEMS fabrication
Manufacturing and integration of MEMS devices by wafer bonding often lead to problems generated by thermal properties of… 
2007
2007
Silicon Wafer Bonding by Modified Surface Activated Bonding Methods
8-inch Si-Si wafer bonding at room temperature is performed by means of two modified surface activated bonding (SAB) methods… 
2006
2006
Sequential Plasma Activated Process for Silicon Direct Bonding
Sequential plasma activated bonding (SPAB) process consisting of oxygen reactive ion etching (RIE) and nitrogen microwave radical… 
2003
2003
Towards a microscopic understanding of plasma activated bonding
Oxygen plasma activated bonding of silicon wafers at room temperature has been investigated systematically. The influence of… 
Review
2002
Review
2002
Fully Integrated Plasma-Activated Bonding (PAB) for High Volume SOI Substrate Manufacturing Process
The quality, availability, and pricing of SOI wafers will determine the speed of their adoption as starting substrates for… 
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