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Osmolality^post 6H FFst:Osmol:Pt:Urine:Qn

Known as: Osmolality p 6H FFST Ur, Osmolalité T06h après restriction hydrique [Osmoles] Urine ; Numérique, Osmolalidad^pos 6H FFst:Osmolalidad:Punto temporal:Orina:Qn 
National Institutes of Health

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4 relations
Challenge testsOsmolalityUrineosmole (unit of measure)

Papers overview

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2016
2016
Synthesis of Indeno[1',2':4,5]imidazo[1,2-a]pyridin-11-ones and Chromeno[4',3':4,5]imidazo[1,2-a]pyridin-6-ones through Palladium-Catalyzed Cascade Reactions of 2-(2-Bromophenyl)imidazo[1,2-a…
A novel and efficient synthesis of 11H-indeno[1',2':4,5]imidazo[1,2-a]pyridin-11-one, a hybrid structure of indenone with imidazo… 
2010
2010
Laser optical gas sensor by photoexcitation effect on refractive index.
Laser optical gas sensors are fabricated by using the crystalline silicon carbide polytype 6H-SiC, which is a wide-bandgap… 
2009
2009
Characterization of defect levels in semi-insulating 6H-SiC by means of photoinduced transient spectroscopy and modulated photocurrent technique
Parameters of electrically active defect centres in vanadium-doped 6H silicon carbide (6H-SiC:V) were investigated by means of… 
2006
2006
Electrochemical etching of n-type 6H-SiC without UV illumination
Deep etching of n-type 6H-SiC using a two-step etching process has been studied. First, anodization of 6H-SiC in an HF… 
2006
2006
6H-Benzo[c]chromen-6-one derivatives as selective ERbeta agonists.
A series of 6H-benzo[c]chromen-6-one and 6H-benzo[c]chromene derivatives were prepared, and the affinity and selectivity for… 
2003
2003
A single crystal SiC plug-and-play high temperature drag force transducer
A novel fully packaged single crystal piezoresistive 6H-silicon carbide (6H-SiC) drag force transducer based on cantilever beam… 
2001
2001
Trap characterization in buried-gate n-channel 6H-SiC JFETs
We present a detailed characterization of deep traps present in buried gate, n-channel 6H-SiC JFETs, based on transconductance… 
1999
1999
Chemical modification of apomorphine to discover sigma ligands: 6H-dibenzo[b,d]pyran and carbazole analogues.
1996
1996
A fully planarized, 6H-SiC UMOS insulated-gate bipolar transistor
Silicon carbide is one of the wide bandgap semiconductors that have been projected to have much better performance than silicon… 
1993
1993
Photoconductive measurements on P-type 6H-SiC
The optoelectronic properties of 6-H silicon carbide (6H-SiC) were investigated using lateral and vertical photoconductive… 
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