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Ohmic contact

Known as: Nonrectifying junction, Ohmic device, Non-rectifying junction 
An ohmic contact is a non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I-V) curve as with Ohm… Expand
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Related topics

Related topics

37 relations
Ballistic conduction in single-walled carbon nanotubesBand bendingChemical vapor depositionClock rate
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Broader (1)

Semiconductor device fabrication

Papers overview

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Highly Cited
2012
Highly Cited
2012
Enhanced power-conversion efficiency in polymer solar cells using an inverted device structure
typically based on n-type metal oxides, our device is solutionprocessed at room temperature, enabling easy processibility over a… Expand
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Highly Cited
2007
Highly Cited
2007
Piezoelectric gated diode of a single zno nanowire
) characteristics re-ceived at different levels of deformation were included in the-oretical calculations. The magnitude of the… Expand
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Highly Cited
2006
Highly Cited
2006
Silicon Vertically Integrated Nanowire Field Effect Transistors
Silicon nanowires have received considerable attention as transistor components because they represent a facile route toward sub… Expand
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Highly Cited
2005
Highly Cited
2005
The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN
A standard metallization scheme for the formation of Ohmic contacts on n-type GaN does exist. It has the following multilayer… Expand
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Highly Cited
2004
Highly Cited
2004
Sequence-Specific Label-Free DNA Sensors Based on Silicon Nanowires
Highly sensitive and sequence-specific DNA sensors were fabricated based on silicon nanowires (SiNWs) with single stranded (ss… Expand
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Highly Cited
2004
Highly Cited
2004
New thermoelectric components using microsystem technologies
This work describes the first thermoelectric devices based on the V-VI-compounds Bi/sub 2/Te/sub 3/ and (Bi,Sb)/sub 2/Te/sub 3… Expand
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Highly Cited
2003
Highly Cited
2003
Analysis of Electrochemical and Thermal Behavior of Li-Ion Cells
This paper seeks to gain a better understanding of the thermal behavior of Li-ion cells using a previously developed… Expand
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Highly Cited
1998
Highly Cited
1998
Electrochemical deposition of metals onto silicon
The general concepts governing the electrochemical deposition of metal films onto semiconductors are discussed. Deposition onto… Expand
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Highly Cited
1998
Highly Cited
1998
Plasma detachment in JET Mark I divertor experiments
The experimental characteristics of divertor detachment in the JET tokamak with the Mark?I pumped divertor are presented for… Expand
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Highly Cited
1996
Highly Cited
1996
Very low resistance multilayer Ohmic contact to n‐GaN
A new metallization scheme has been developed for obtaining very low Ohmic contact to n‐GaN. The metallization technique involves… Expand
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