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Ohmic contact

Known as: Nonrectifying junction, Ohmic device, Non-rectifying junction 
An ohmic contact is a non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I-V) curve as with Ohm… Expand
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Papers overview

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Highly Cited
2012
Highly Cited
2012
typically based on n-type metal oxides, our device is solutionprocessed at room temperature, enabling easy processibility over a… Expand
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Highly Cited
2007
Highly Cited
2007
) characteristics re-ceived at different levels of deformation were included in the-oretical calculations. The magnitude of the… Expand
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Highly Cited
2006
Highly Cited
2006
Silicon nanowires have received considerable attention as transistor components because they represent a facile route toward sub… Expand
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Highly Cited
2005
Highly Cited
2005
A standard metallization scheme for the formation of Ohmic contacts on n-type GaN does exist. It has the following multilayer… Expand
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Highly Cited
2004
Highly Cited
2004
Highly sensitive and sequence-specific DNA sensors were fabricated based on silicon nanowires (SiNWs) with single stranded (ss… Expand
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Highly Cited
2004
Highly Cited
2004
This work describes the first thermoelectric devices based on the V-VI-compounds Bi/sub 2/Te/sub 3/ and (Bi,Sb)/sub 2/Te/sub 3… Expand
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Highly Cited
2003
Highly Cited
2003
This paper seeks to gain a better understanding of the thermal behavior of Li-ion cells using a previously developed… Expand
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Highly Cited
1998
Highly Cited
1998
The general concepts governing the electrochemical deposition of metal films onto semiconductors are discussed. Deposition onto… Expand
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Highly Cited
1998
Highly Cited
1998
The experimental characteristics of divertor detachment in the JET tokamak with the Mark?I pumped divertor are presented for… Expand
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Highly Cited
1996
Highly Cited
1996
A new metallization scheme has been developed for obtaining very low Ohmic contact to n‐GaN. The metallization technique involves… Expand
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