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National Institutes of Health

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2016
2016
Process Optimization and Device Characterization of Nonvolatile Charge Trap Memory Transistors Using In–Ga–ZnO Thin Films as Both Charge Trap and Active Channel Layers
Charge-trap memory thin-film transistors (CTM-TFTs) using In-Ga-ZnO (IGZO) thin films as active channel and charge trap layers… Expand
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2014
2014
Cyanobuta-1,3-dienes as novel electron acceptors for photoactive multicomponent systems.
The synthesis, electrochemical, and photophysical properties of five multicomponent systems featuring a Zn(II) porphyrin (ZnP… Expand
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2012
2012
Impact of Individual Charged Gate-Oxide Defects on the Entire $I_{D}$–$V_{G}$ Characteristic of Nanoscaled FETs
The measurement of the entire ID-VG characteristic of a nanoscaled pMOSFET before and after the capture of a single elementary… Expand
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Highly Cited
2011
Highly Cited
2011
Graphene gate electrode for MOS structure-based electronic devices.
We demonstrate that the use of a monolayer graphene as a gate electrode on top of a high-κ gate dielectric eliminates mechanical… Expand
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2011
2011
Photoinduced intra- and intermolecular electron transfer in solutions and in solid organized molecular assemblies.
The present paper highlights results of a systematic study of photoinduced electron transfer, where the fundamental aspects of… Expand
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2009
2009
Reliability of barrier engineered charge trapping devices for sub-30nm NAND flash
Reliability of charge trapping (CT) devices has been examined in detail, and the path to sub-30nm NAND flash is investigated. All… Expand
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2008
2008
Rapid transport of nano-particles having a fractional elementary charge on average in capacitively-coupled rf discharges by amplitude-modulating discharge voltage.
We have observed transport of nano-particles having, on average, a fractional elementary charge in single pulse and double pulse… Expand
2006
2006
Detection of Electron Trap Generation due to Constant Voltage Stress on High-κ Gate Stacks
Positive constant voltage stress combined with charge pumping (CP) measurements was applied to study trap generation phenomena in… Expand
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Highly Cited
2001
Highly Cited
2001
Manipulation of elementary charge in a silicon charge-coupled device
The ultimate limit in the operation of an electronic device is the manipulation of a single charge. Such a limit has been… Expand
1999
1999
A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs
Abstract A new charge pumping (CP) technique is proposed to obtain the spatial profile of interface-state density ( N it ) and… Expand
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