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Metal-induced gap states

Known as: Migs 
In bulk semiconductor band structure calculations, it is assumed that the crystal lattice (which features a periodic potential due to the atomic… Expand
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Related topics

Related topics

7 relations
Anderson's ruleEvaporation (deposition)HeterojunctionMetal–semiconductor junction
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Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2016
2016
Optimizing Majority-Inverter Graphs with functional hashing
A Majority-Inverter Graph (MIG) is a recently introduced logic representation form whose algebraic and Boolean properties allow… Expand
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2016
2016
Microinvasive Glaucoma Surgery
Aim: The aim of the article is to discuss issues concerning microinvasive glaucoma surgery. Material and Methodology, Discussion… Expand
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2016
2016
LUT Mapping and Optimization for Majority-Inverter Graphs
A Majority-Inverter Graph (MIG) is a directed acyclic graph in which every vertex represents a three-input majority operation and… Expand
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2014
2014
The MIGS Future: What Will Glaucoma Surgery Look Like in 5 Years?
2011
2011
Amorphous Si Rear Schottky Junction Solar Cell With a LiF/Al Back Electrode
Amorphous Si (a-Si) rear Schottky junction solar cells with a LiF/Al back electrode are proposed as an alternative prototype for… Expand
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2007
2007
Multiple-Scale Pattern Recognition Applied to Faint Intergranular G-band Structures
Abstract Small-scale solar magnetic flux concentrations are studied in two-dimensional G-band images at very high spatial… Expand
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2005
2005
Metal-induced gap states in epitaxial organic-insulator/metal interfaces
We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown… Expand
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2005
2005
Electronic properties of metal-induced gap states formed at alkali-halide/metal interfaces
The spatial distribution and site distribution of metal-induced gap states (MIGS) are studied by thickness-dependent near-edge x… Expand
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2003
2003
Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]
We have examined the impact of small and systematic changes at the metal/dielectric interface on metal work-function and report… Expand
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1996
1996
Effects of electron mass anisotropy on Hall factors in 6H‐SiC
The room temperature Hall factors in 6H‐SiC have been measured under different magnetic fields. It is found that the Hall… Expand
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