Mason's invariant

Known as: Unilateral power gain 
In electronics, Mason's invariant, named after Samuel Jefferson Mason, is a measure of the quality of transistors. "When trying to solve a seemingly… (More)
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Topic mentions per year

Topic mentions per year

1978-2016
012319782016

Papers overview

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2016
2016
In this paper, we presents a detailed investigation of the impact of underlap channel on the analog/RF performance of Dopant… (More)
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2011
2011
We report results from a 130nm Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. A 0.13×2µm<sup… (More)
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2009
2009
The substrate resistance of 45 nm CMOS devices shows a strong dependence on the distance between the device edge and the… (More)
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2008
2008
Electrical characterization and modeling of 2 times 50 mum gatewidth InAs/AlSb HEMTs with 225 nm gate-length have been performed… (More)
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2006
2006
In this paper, both ac current crowding and base contact impedance are considered and included in the T-type small-signal… (More)
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2005
2005
4H-SiC RF BJTs on a semi-insulating (>10/sup 5/ /spl Omega/-cm) substrate were designed and fabricated for the first time using… (More)
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2001
2001
Reports the measurement of submicron transferred-substrate InGaAs/InAlAs heterojunction bipolar transistors (HBTs) in the 140-220… (More)
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2001
2001
It is shown that the maximum frequency of oscillation of an InP-HBT may be limited by the low velocity of the holes when operated… (More)
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1991
1991
0.35- mu m complementary metal-oxide-semiconductor (CMOS)/silicon-on-sapphire (SOS) n- and p-channel MOSFETs with a metal-over… (More)
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1987
1987
A new ac MODFET model including distributed effects is presented. We have solved the wave equation of the MODFET, which… (More)
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