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MENTAL RETARDATION, ANTERIOR MAXILLARY PROTRUSION, AND STRABISMUS
Known as:
MRAMS
National Institutes of Health
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6 relations
Autosomal recessive inheritance
Global developmental delay
Intellectual disability, severe
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Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
Impact of voltage scaling on STT-MRAMs through a variability-aware simulation framework
R. Rose
,
G. Carangelo
,
M. Lanuzza
,
F. Crupi
,
G. Finocchio
,
M. Carpentieri
International Conference on Synthesis, Modeling…
2017
Corpus ID: 29300646
In this paper, we focus on the study of the impact of voltage scaling on writing performance and energy of STT-MRAM arrays…
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2015
2015
Spin-Hall effect MRAM based cache memory: A feasibility study
Jongyeon Kim
,
Bill Tuohy
,
+4 authors
C. Kim
Device Research Conference
2015
Corpus ID: 43334907
One of the key objectives of STT-MRAM research has been on minimizing switching current while maintaining the required…
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2014
2014
Enhanced synchronization in an array of spin torque nano-oscillators in the presence of oscillating external magnetic field
B. Subash
,
V. K. Chandrasekar
,
M. Lakshmanan
2014
Corpus ID: 119108937
We demonstrate that the synchronization of an array of electrically coupled spin torque nano-oscillators (STNO) modelled by…
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Highly Cited
2012
Highly Cited
2012
Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective
Charles Augustine
,
N. Mojumder
,
Xuanyao Fong
,
S. H. Choday
,
S. P. Park
,
Kaushik Roy
IEEE Sensors Journal
2012
Corpus ID: 27955388
Electron-spin based data storage for on-chip memories has the potential for ultrahigh density, low power consumption, very high…
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2012
2012
STT-MRAMs for future universal memories: Perspective and prospective
C. Augustine
,
N. Mojumder
,
Xuanyao Fong
,
H. Choday
,
S. P. Park
,
K. Roy
28th International Conference on Microelectronics…
2012
Corpus ID: 24971930
Electron-spin based data storage for on-chip memories has the potential for ultra-high density, low-power consumption, very high…
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2012
2012
Non-destructive variability tolerant differential read for non-volatile logic
J. Das
,
S. Alam
,
S. Bhanja
Midwest Symposium on Circuits and Systems
2012
Corpus ID: 21446734
In Magnetoresistive RAMs (MRAMs), Magnetic Tunnel Junctions (MTJs) are used to store bits in memory and the bits are read by…
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2008
2008
A 500-MHz MRAM macro for high-performance SoCs
N. Sakimura
,
R. Nebashi
,
H. Honjo
,
S. Saito
,
Y. Kato
,
T. Sugibayashi
IEEE Asian Solid-State Circuits Conference
2008
Corpus ID: 30762130
A 500-MHz MRAM macro is developed using a 0.15-mum CMOS process and a newly developed MRAM process. The macro is designed using a…
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2007
2007
A 250-MHz 1-Mbit embedded MRAM macro using 2T1MTJ cell with bitline separation and half-pitch shift architecture
N. Sakimura
,
T. Sugibayashi
,
+4 authors
N. Kasai
IEEE Asian Solid-State Circuits Conference
2007
Corpus ID: 20282469
A 250-MHz 1-Mbit MRAM macro is demonstrated in a 0.15-mum standard CMOS process with 1.5-V supply. Its clock frequency is the…
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Review
2007
Review
2007
Magnetic random access memory (MRAM).
Yuan-kai Zheng
,
Yihong Wu
,
+10 authors
Bo Liu
Journal of Nanoscience and Nanotechnology
2007
Corpus ID: 34263764
The high density and high speed nonvolatile MTJ MRAMs are reviewed from perspective of the reading and writing operation. The…
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1992
1992
Improvement of motor performance of HIV‐positive patients under AZT therapy
G. Arendt
,
H. Hefter
,
L. Buescher
,
F. Hilperath
,
C. Elsing
,
H. Freund
Neurology
1992
Corpus ID: 32762681
We performed motor tests (most rapid alternating movements [MRAMs] of index fingers and most rapid contractions [MRCs] of…
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