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Lactose challenge:Imp:Pt:Exhl gas:Nom

Known as: 乳糖刺激:印象:时间点:呼出的气体:名义型, Лактоза проба:Впчт:ТчкВрм:Выд газ:Ном, Lactose HBT ExG-Imp 
 
National Institutes of Health

Topic mentions per year

Topic mentions per year

1994-2018
02419942018

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5 relations
Challenge testsGasesLactoseNom
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Related mentions per year

Related mentions per year

1936-2018
19401960198020002020
Lactose challenge:Imp:Pt:Exhl gas:Nom
Gases
Lactose
Portion of respiratory air
Challenge tests
Nom

Papers overview

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2016
2016
Impact of Bias Conditions on Total Ionizing Dose Effects of $^{60}{\hbox{Co}}\gamma $ in SiGe HBT
The effect of bias condition on total ionizing dose (TID) of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) is… (More)
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2014
2014
SiGe HBT Technology Based on a 0.13- $\mu{\rm m}$ Process Featuring an ${f}_{\rm MAX}$ of 325 GHz
A self-aligned SiGe HBT technology achieving a cutoff frequency (f<sub>T</sub>) of 253 GHz was developed using a selective SiGe… (More)
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2014
2014
A 270 GHz push-push oscillator in InP-DHBT-on-BiCMOS technology
A 270-GHz reflection-type push-push oscillator is presented, realized using 0.8μm emitter InP-DHBTs. The InP DHBT-on-BiCMOS… (More)
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2009
2009
A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates
We present results on the direct monolithic integration of III–V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 × 5… (More)
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2008
2008
Experimental cryogenic modeling and noise of SiGe HBTs
SiGe devices are an exciting contender for extremely low noise, cryogenically cooled amplifiers. This paper begins with a… (More)
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2005
2005
cdma2000 PCS/cell SiGe HBT load insensitive power amplifiers
A novel power amplifier design technique is proposed that uses load pull measurements in order to optimize linearity and… (More)
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2005
2005
Ka-band (35 GHz) 3-stage SiGe HBT low noise amplifier
We present design, simulation, and measurement of a Ka-band (35 GHz) low noise amplifier (LNA) fabricated in a 120 GHz ft/fmax… (More)
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2004
2004
Simulation and analysis of the high frequency performances of SiGe HBT with quantum well base region
In this paper the structure and fabrication of a type of SiGe HBT with quantum well base region are introduced and analyzed… (More)
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2003
2003
Neuro-Space Mapping technique for nonlinear device modeling and large signal simulation
A new Neuro-Space Mapping (Neuro-SM) approach is presented enabling the space mapping (SM) concept to be applied to nonlinear… (More)
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1995
1995
AlGaAs/GaAs Heterojunction Bipolar Transistors on Si substrate using epitaxial lift-off
Epitaxial lift-off (ELO) technique was used for the first time to transplant AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT… (More)
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