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International Electron Devices Meeting

The IEEE International Electron Devices Meeting (IEDM) is an annual micro- and nanoelectronics conference held each December that serves as a forum… Expand
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2016
2016
 
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2015
2015
The gallium nitride (GaN) high-electron-mobility transistor (HEMT) has emerged as the dominant force in high-frequency solid… Expand
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2011
2011
In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence… Expand
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2009
2009
This paper reports on the implementation of low-voltage complementary mechanical logic achieved by using body-biased aluminum… Expand
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2007
2007
A two day workshop on Southern Ocean cephalopods was held in Hobart, Tasmania, Australia prior to the triennial 2006 Cephalopod… Expand
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2006
2006
  • Gordon E. Moore
  • IEEE Solid-State Circuits Society Newsletter
  • 2006
  • Corpus ID: 37812517
This article is reprinted from the Internaional Electron Devices Meeting (1975). It discusses the complexity of integrated… Expand
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Highly Cited
2004
Highly Cited
2004
D aniel Sui has sent me a written version of comments presented by five geographers at a panel on the first law of geography… Expand
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Highly Cited
2003
Highly Cited
2003
How do rational firms respond to consumer biases? In this paper we analyze the profit-maximizing contract design of firms if… Expand
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Highly Cited
2003
Highly Cited
2003
Off-state leakage is static power, current that leaks through transistors even when they are turned off. The other source of… Expand
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Highly Cited
2001
Highly Cited
2001
THIS ARTICLE EXAMINES SERVICE QUALITY AND IDENTIFIES issues meriting attention. The purpose is to guide the next generation of… Expand
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