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International Electron Devices Meeting

The IEEE International Electron Devices Meeting (IEDM) is an annual micro- and nanoelectronics conference held each December that serves as a forum… 
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Papers overview

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2017
2017
The importance of context is widely studied in design practice. Still, design workshops often take place in meeting rooms, with… 
Highly Cited
2016
2015
2015
  • J. Komiak
  • IEEE Microwave Magazine
  • 2015
  • Corpus ID: 19623484
The gallium nitride (GaN) high-electron-mobility transistor (HEMT) has emerged as the dominant force in high-frequency solid… 
Highly Cited
2012
Highly Cited
2012
This paper reports on the implementation of low-voltage complementary mechanical logic achieved by using body-biased aluminum… 
2011
2011
In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence… 
Highly Cited
2007
Highly Cited
2007
A two day workshop on Southern Ocean cephalopods was held in Hobart, Tasmania, Australia prior to the triennial 2006 Cephalopod… 
Highly Cited
2006
Highly Cited
2006
  • G. Moore
  • IEEE Solid-State Circuits Society Newsletter
  • 2006
  • Corpus ID: 37812517
This article is reprinted from the Internaional Electron Devices Meeting (1975). It discusses the complexity of integrated… 
Highly Cited
2004
Highly Cited
2004
D aniel Sui has sent me a written version of comments presented by five geographers at a panel on the first law of geography… 
Highly Cited
2003
Highly Cited
2003
Off-state leakage is static power, current that leaks through transistors even when they are turned off. The other source of… 
Highly Cited
2001
Highly Cited
2001
A technique for the analysis of random dopant-induced effects in semiconductor devices is presented. It is based on the “small…