Insulated-gate bipolar transistor

Known as: Insulated gate bipolar transistor, Bipolar, IGBT 
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was… (More)
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Papers overview

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2012
2012
This paper presents the Insulated Gate Bipolar Transistor (IGBT) device failure analysis in overvoltage condition, which is a… (More)
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2010
2010
In this paper, we present a detailed analysis and optimization of the superjunction (SJ) insulated gate bipolar transistor (IGBT… (More)
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Highly Cited
2009
Highly Cited
2009
Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors… (More)
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2008
2008
  • IXYS IGBTs
  • 2008
IGBT Fundamentals The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large… (More)
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2006
2006
A new adjustable insulated gate bipolar transistor (IGBT) with Si/SiGe heterojunction collector structures is proposed to improve… (More)
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2005
2005
Simulators in power electronics are less developed than in other electronic fields. The main modelling methods are between the… (More)
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2004
2004
A thermal resistor-capacitor (RC) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a… (More)
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2000
2000
A new trench clustered insulated gate bipolar transistor (TCIGBT) is reported. In this device, a multitude of UMOS cathode cells… (More)
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1991
1991
A physics-based model for the insulated gate bipolar transistor (IGBT) is implemented into the circuit simulation package IG… (More)
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1987
1987
This paper describes an improved IGBT with a trench gate structure, which demonstrates a low forward voltage drop of 1.4 volts at… (More)
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