Insulated-gate bipolar transistor

Known as: Insulated gate bipolar transistor, Bipolar, IGBT

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was…

Papers overview

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2015

In one example, a method includes determining that an insulated-gate bipolar transistor (IGBT) is saturated, and while the IGBT…

2014

The invention provides an insulated gate bipolar transistor. The insulated gate bipolar transistor comprises a first base region…

2012

The invention provides an insulated gate bipolar transistor (IGBT) which is high in short circuit tolerance, little in loss of…

2012

The present invention relates to an insulated gate bipolar transistor comprising a first conductive type first semiconductor…

2011

The invention discloses an insulated gate bipolar transistor. The insulated gate bipolar transistor comprises a semiconductor…

2007

Insulated gate bipolar transistor (IGBT) comprises a substrate having a first conductivity type, the first conductivity type and…

2006

A reversible D.C. drive system, which employs a four-quadrant chopper with the insulated gate bipolar transistors (IGBT), is…

2005

一种半导体器件，具有集电极、集电极上形成的p + 集电极区(22)、集电极区上形成的n - 漂移区(24)、漂移区上形成的p - 体区(26)、以及体区中形成的多个n + 发射极区(28)。发射极区连接到发射极。多个沟槽栅极(32…

1997

1996

An insulated gate bipolar transistor of the invention having a first and a second emitter region. A first conductivity type…