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Institution inventory number:ID:Pt:Subarachnoid drain:Nom
Known as:
número de inventario de la institución:intradérmico:punto en el tiempo:drenaje subaracnoideo:Nominal:
, Subrachnoid Drain Inventory #
, Subarachnoid Drain Inventory #
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National Institutes of Health
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Related topics
4 relations
Drain device
Identifier
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2019
Highly Cited
2019
Electrical Performance Advancement in SiC Power Module Package Design With Kelvin Drain Connection and Low Parasitic Inductance
Fei Yang
,
Zhiqiang Wang
,
Zhenxian Liang
,
Fei Wang
IEEE Journal of Emerging and Selected Topics in…
2019
Corpus ID: 61810178
Silicon carbide (SiC) power modules are promising for high-power applications because of the high breakdown voltage, high…
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Highly Cited
2016
Highly Cited
2016
Effect of polluted water on soil and plant contamination by heavy metals in El-Mahla El-Kobra, Egypt
E. Mahmoud
,
A. Ghoneim
2016
Corpus ID: 4620404
Abstract. The discharge of untreated waste water in Zefta drain and drain no. 5 is becoming a problem for many farmers in the El…
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2016
2016
Use of Subperiosteal Drain Versus Subdural Drain in Chronic Subdural Hematomas Treated With Burr-Hole Trepanation: Study Protocol for a Randomized Controlled Trial
J. Soleman
,
K. Lutz
,
S. Schaedelin
,
L. Mariani
,
J. Fandino
JMIR Research Protocols
2016
Corpus ID: 9757284
Background Chronic subdural hematoma (cSDH) is one of the most frequent neurosurgical conditions affecting elderly people and is…
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Review
2013
Review
2013
Subgrid modelling for geophysical flows
J. Frederiksen
,
T. O’Kane
,
M. Zidikheri
Philosophical Transactions of the Royal Society A…
2013
Corpus ID: 23707354
Recently developed closure-based and stochastic model approaches to subgrid-scale modelling of eddy interactions are reviewed. It…
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2010
2010
Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability
Chunhua Zhou
,
W. Chen
,
E. Piner
,
K. J. Chen
IEEE Electron Device Letters
2010
Corpus ID: 29281615
In this letter, we propose an AlGaN/GaN normally off high-electron mobility transistor (HEMT) with reverse drain blocking…
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2010
2010
Hysteretic drain-current behavior due to random telegraph noise in Scaled-down FETs with high-κ/metal-gate stacks
H. Miki
,
N. Tega
,
+7 authors
K. Torii
International Electron Devices Meeting
2010
Corpus ID: 41758419
This work demonstrates for the first time that hysteretic effects associated with random telegraph noise (RTN) can lead to the…
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2009
2009
Drain pipe inspection robot using wireless communication system
Dongmei Wu
,
H. Ogai
,
Y. Yeh
,
K. Hirai
,
T. Abe
,
G. Sato
ICCAS-SICE
2009
Corpus ID: 38377491
Pipe lines of various materials need to be inspected after certain years. Therefore, it is necessary to develop a flexible pipe…
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Highly Cited
2007
Highly Cited
2007
Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse
D. Song
,
Jie Liu
,
Z. Cheng
,
W.C.-W. Tang
,
K. Lau
,
Kevin J. Chen
IEEE Electron Device Letters
2007
Corpus ID: 23037889
We report a low-density drain high-electron mobility transistor (LDD-HEMT) that exhibits enhanced breakdown voltage and reduced…
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2004
2004
Collapse of MOSFET drain current after soft breakdown
A. Cester
,
A. Paccagnella
,
G. Ghidini
,
S. Deleonibus
,
G. Guégan
IEEE transactions on device and materials…
2004
Corpus ID: 44050074
Gate-oxide soft breakdown (SB) can have a severe impact on MOSFET performance even when not producing any large increase of the…
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2004
2004
MOSFET drain and induced-gate noise modeling and experimental verification for RF IC design
Chih-Hung Chen
,
Feng Li
,
Yuhua Cheng
Proceedings of the International Conference on…
2004
Corpus ID: 2549615
Analytical models for the induced gate noise and its correlation with the channel noise of MOSFETs including the channel-length…
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