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Institution inventory number:ID:Pt:Subarachnoid drain:Nom

Known as: número de inventario de la institución:intradérmico:punto en el tiempo:drenaje subaracnoideo:Nominal:, Subrachnoid Drain Inventory #, Subarachnoid Drain Inventory # 
National Institutes of Health

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4 relations
Drain deviceIdentifierNomNumbers

Papers overview

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2017
2017
SIMULATION METHODS APPLICATION FOR LPG DELIVERIES PLANNING AND SCHEDULING TO THE NETWORK OF STATIONS UNDER DEMAND UNCERTAINTY
In our paper we considered the problem of demand uncertainty and its influence on planning and scheduling of LPG deliveries. The… 
2016
2016
Spring active drain using bladder (50–60 ml) syringe (De Adotey’s drain)
2015
2015
High Frequency GaN Drain Supply Modulators for Radio-Frequency Power Amplifiers
Supply modulation, or envelope tracking (ET), is a system efficiency improvement technique in radio-frequency (RF) transmitters… 
2014
2014
Securing Cloud from Cloud Drain
Today, in the world of communication, connected systems is growing at a rapid pace. To accommodate this growth the need for… 
2010
2010
Impact of reinfusion drains on hemoglobin level in total knee arthroplasty.
We conducted this study to determine the effect of reinfusion drains on the difference in hemoglobin (Hb) levels before and after… 
Review
2009
Review
2009
Comparison of methods for placing and managing a silastic drain after pulmonary resection.
We have been using a silastic drain [Blake drain (BD)] after pulmonary resection by different placement methods and reviewed the… 
2007
2007
ENHANCEMENT OF BILBEAS DRAIN WATER QUALITY USING SUBMERGED BIOFILTERS (SBS)
Bilbeas drain is one of the polluted water streams in Egypt. The concentration of organic matter (COD) along the year 2001 ranged… 
2004
2004
Collapse of MOSFET drain current after soft breakdown
Gate-oxide soft breakdown (SB) can have a severe impact on MOSFET performance even when not producing any large increase of the… 
2004
2004
MOSFET drain and induced-gate noise modeling and experimental verification for RF IC design
Analytical models for the induced gate noise and its correlation with the channel noise of MOSFETs including the channel-length… 
1988
1988
Gallium-arsenide E- and D-MESFET device noise characteristics operated at cryogenic temperatures with ultralow drain current
The low-frequency noise characteristics of GaAs MESFETs operating at very low power and at cryogenic temperatures of 77 and 10 K… 
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