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INSB protein, Manduca sexta
Known as:
INS-b protein, Manduca sexta
, insecticyanin B form protein, Manduca sexta
National Institutes of Health
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Blue biliprotein, Manduca sexta
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
Fabrication of InSb nanostructures by using TBCl etching effect
K. Tateno
,
Guoqiang Zhang
,
S. Sasaki
,
K. Kumakura
2017
Corpus ID: 140095863
InSb は高い電子易動度と良好な正孔易動度を持ち、また、エキシトンのボーア半径が大きいため、 50 nmサイズでも量子効果が起きる。量子物理では大きな Rashba効果、ランデの g…
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2016
2016
Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications
I. Watanabe
,
Y. Yamashita
,
+17 authors
H. Fujishiro
IEEE Compound Semiconductor Integrated Circuit…
2016
Corpus ID: 16790697
We have improved the performances of InP-based HEMTs and MMICs for terahertz-wave wireless communications using a high frequency…
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2016
2016
Surface passivation of backside-illuminated InSb FPAs
P. Wei
,
Kelin Zheng
,
Liwen Wang
,
D. Geng
,
X. Su
Other Conferences
2016
Corpus ID: 99731988
A method of passivation of etch-thinned bulk InSb by anodic oxide grown by wet anodization and vacuum deposition of SiNx layers…
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2015
2015
Dependence of the Deformation of 128×128 InSb Focal-plane Arrays on the Silicon Readout Integrated Circuit Thickness
Xiaoling Zhang
,
Qingduan Meng
,
Liwen Zhang
2015
Corpus ID: 14462496
The square checkerboard buckling deformation appearing in indium antimonide infrared focal-plane arrays (InSb IRFPAs) subjected…
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2015
2015
A Study on Process Damage during Fabrication of InSb HEMT
Takaomi Maeda
2015
Corpus ID: 115322236
はじめに:狭バンドギャップ半導体である InSb は III-V 族半導体の中で最小の電子有効質量をも つ。そのため、InSb をチャネルとする高電子移動度トランジスタ(High Electron Mobility Transistor: HEMT…
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2012
2012
Characterization of InSb QDs grown on InAs (100) substrate by MBE and MOVPE
A. Karim
,
O. Gustafsson
,
+5 authors
J. Song
Photonics Europe
2012
Corpus ID: 121052164
We report on the optical and structural characterization of InSb QDs in InAs matrix, grown on InAs (100) substrates, for infrared…
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2008
2008
Anomalous Spin Splitting of Electrons in InSb Type-II Quantum Dots in an InAs Matrix
Ya. V. Terent’ev
,
O. Lyublinskaya
,
A. Toropov
,
B. Meltser
,
A. Semenov
,
S. Ivanov
2008
Corpus ID: 117159711
Magnetooptical studies of InSb type-II quantum dots (QDs) grown by molecular beam epitaxy (MBE) in an InAs matrix have been done…
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2007
2007
Anti-Stokes Photoluminescence and Enhanced Raman Scattering from InSb Nanodots and Nanowires
T. Horiuchi
,
T. Tamagawa
,
N. Wada
2007
Corpus ID: 137940002
Submitted for the MAR07 Meeting of The American Physical Society Anti-Stokes Photoluminescence and Enhanced Raman Scattering from…
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1999
1999
High-performance InSb/In1-xAlxSb focal plane detector arrays grown by MBE
A. Johnson
Photonics West
1999
Corpus ID: 93181130
Results are presented for indium antimonide/indium aluminum antimonide (InSb/InAlSb) diodes grown by molecular beam epitaxy (MBE…
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1975
1975
ZnTe InSb Heterojunction의 전기적 특성 ( Electrical Properties of ZnTe-InSb Heterjunctions )
김화택
1975
Corpus ID: 179090128
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