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INP 0400
Known as:
INP-0400
, INP0400
National Institutes of Health
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Related topics
Related topics
1 relation
Broader (1)
Hydrazines
Papers overview
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Highly Cited
2006
Highly Cited
2006
Direct Digital Synthesizer With Sine-Weighted DAC at 32-GHz Clock Frequency in InP DHBT Technology
S. E. Turner
,
D. Kotecki
IEEE Journal of Solid-State Circuits
2006
Corpus ID: 19595636
A direct digital synthesizer (DDS) implemented in InP double heterojunction bipolar transistor (DHBT) technology is reported…
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2005
2005
Microbeam high-resolution x-ray diffraction in strained InGaAlAs-based multiple quantum well laser structures grown selectively on masked InP substrates
A. Sirenko
,
A. Kazimirov
,
+6 authors
A. Ougazzaden
Journal of Applied Physics
2005
Corpus ID: 5763961
Structural and optical properties of the InGaAlAs-based multiple quantum well (MQW) 1.3μm laser structures produced on InP (001…
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2003
2003
Electronic structure of self-assembled InP'GaP quantum dots from high-pressure photoluminescence
A. Goñi
,
C. Kristukat
,
F. Hatami
,
S. Dressler
,
W. Masselink
,
C. Thomsen
2003
Corpus ID: 4997377
The electronic structure of self-organized InP/GaP quantum dots ~QDs! has been studied by means of photoluminescence ~PL…
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2000
2000
Monolithic InGaAs-InP p-i-n/HBT 40-Gb/s optical receiver module
M. Bitter
,
Raimond Bauknecht
,
W. Hunziker
,
H. Melchior
IEEE Photonics Technology Letters
2000
Corpus ID: 44053208
A fully packaged 40-Gb/s optical receiver module based on monolithic integration of p-i-n photodiodes and single-heterojunction…
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Review
1999
Review
1999
Breakdown in millimeter-wave power InP HEMTs: a comparison with GaAs PHEMT's
J. Alamo
,
M. Somerville
IEEE J. Solid State Circuits
1999
Corpus ID: 17612053
In spite of their outstanding transport characteristics, InP high-electron mobility transistors (HEMTs) deliver lower output…
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1996
1996
27 GHz bandwidth high speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET-traveling wave amplifier
S. Waasen
,
A. Umbach
,
+11 authors
F. Tegude
GaAs IC Symposium IEEE Gallium Arsenide…
1996
Corpus ID: 15733144
An InP-based monolithic integrated photoreceiver with a bandwidth of 27 GHz is presented. The device consists of a waveguide fed…
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Review
1995
Review
1995
InP HBTs Growth, Processing, and Applications
B. Jalali
,
S. Pearton
1995
Corpus ID: 106678250
Part 1 Introduction: wet chemical etch mixtures for InP wet chemical etch mixtures for other III-V materials. Part 2 Growth of…
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1992
1992
Microwave and far-infrared induced optically detected cyclotron resonance in epitaxial InP and GaAs.
Moll
,
Wetzel
,
Meyer
,
Omling
,
Scholz
Physical Review B (Condensed Matter)
1992
Corpus ID: 35878033
1989
1989
Electron-spin resonance of the two-dimensional electron gas in Ga0.47In0.53As-InP heterostructures.
Dobers
,
Vieren
,
Guldner
,
Bovė
,
Omnès
,
Razeghi
Physical Review B (Condensed Matter)
1989
Corpus ID: 44368008
The microwave-induced change of the magnetoresistivity of ${\mathrm{Ga}}_{0.47}$${\mathrm{In}}_{0.53}$As-InP heterostructures…
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Highly Cited
1987
Highly Cited
1987
Observation of magnetoquantized interface states by electron tunneling in single-barrier n-(InGa)As-InP-n+(InGa)As heterostructures.
Snell
,
Chan
,
+8 authors
Pate
Physical Review Letters
1987
Corpus ID: 45437319
A new type of tunneling phenomenon in forward-biased single-barrier ${n}^{+}(\mathrm{InGa})\mathrm{As}\ensuremath{-}{n…
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