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Holding current (electronics)

Known as: Holding current 
The holding current (hypostatic) for electrical, electromagnetic and electronic devices is the minimum current which must pass through a circuit in… 
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Related topics

Related topics

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Broader (1)

Power electronics
Silicon controlled rectifierSpark-gap transmitterTRIACThyristor

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Design and Characterization of a High-Precision Digital Electromagnetic Actuator with Four Discrete Positions
A high-precision planar digital electromagnetic actuator with two displacement directions and four discrete positions is… 
2011
2011
High-temperature operation MOS-IGBT power clamp for improved ESD protection in smart power SOI technology
We propose a new MOS-IGBT power clamp for high-temperature operation providing a very compact high-robustness ESD protection with… 
2009
2009
New design method of low power over current protection circuit for low dropout regulator
In this paper, a low power current protection circuit implemented in LDOs is presented. The proposed circuit, designed in 0.35µm… 
2003
2003
TLP systems with combined 50- and 500-/spl Omega/ impedance probes and Kelvin probes
Transmission line pulse (TLP) systems are mainly classified by their impedance, such as a 50- or 500-/spl Omega/ current source… 
1993
1993
InP/InGaAsP double-heterostructure optoelectronic switch
The double-heterostructure optoelectronic switch (DOES), fabricated in the InP/InGaAsP material system, is demonstrated. The… 
1991
1991
Si/SiGe digital optoelectronic switch
The physical parameters and functional characteristics of a Si/SiGe digital optoelectronic switch are reported. The device is… 
1989
1989
A computer-aided GTO model for power electronic circuit design
A model is presented of the gate-turn-off thyristor (GTO), which can be matched to measured data and incorporated in the SPICE… 
1986
1986
Time- and voltage-dependent currents in locust ocellar L-neurones
Summary1.Current-clamp and voltage-clamp experiments were performed on L-neurones in the median ocellar nerve of locusts (Locusta… 
1983
1983
Switching conditions for CMOS latch-up path with shunt resistances
Analytical expressions for the switching points of a one-dimensional p-n-p-n representation for a CMOS latch-up path are obtained… 
1983
1983
High-density and reduced latchup susceptibility CMOS technology for VLSI
Increasing layout density and reducing susceptibility to latchup are two of the most pressing concerns in making CMOS a superior… 
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