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Holding current (electronics)

Known as: Holding current 
The holding current (hypostatic) for electrical, electromagnetic and electronic devices is the minimum current which must pass through a circuit in… 
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Related topics

Related topics

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Broader (1)

Power electronics
Silicon controlled rectifierSpark-gap transmitterTRIACThyristor

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2016
2016
Generation of Laser Pulses in the Megahertz Range of Repetition Frequencies by Low-Voltage AlGaAs/GaAs Laser-Thyristors
The process of generation of a high-frequency train of laser pulses in laser-thyristors (LTs) based on AlGaAs/GaAs… 
2015
2015
Design and Characterization of a High-Precision Digital Electromagnetic Actuator with Four Discrete Positions
A high-precision planar digital electromagnetic actuator with two displacement directions and four discrete positions is… 
2010
2010
The Optimal Drive Current of Solenoid Valve and Its Effect on Fuel Injection Characteristics
The existence of the holding and firing current critical values that maintain the solenoid valve's armature in a pick-up state… 
2009
2009
New design method of low power over current protection circuit for low dropout regulator
In this paper, a low power current protection circuit implemented in LDOs is presented. The proposed circuit, designed in 0.35µm… 
2001
2001
Dynamic and Static Characteristics of MOS Thyristors Irradiated with Electrons
The results of development and manufacture of MOS controlled thyristors (MCT) are presented. Static and dynamic characteristics… 
1993
1993
InP/InGaAsP double-heterostructure optoelectronic switch
The double-heterostructure optoelectronic switch (DOES), fabricated in the InP/InGaAsP material system, is demonstrated. The… 
1991
1991
Si/SiGe digital optoelectronic switch
The physical parameters and functional characteristics of a Si/SiGe digital optoelectronic switch are reported. The device is… 
1989
1989
A computer-aided GTO model for power electronic circuit design
A model is presented of the gate-turn-off thyristor (GTO), which can be matched to measured data and incorporated in the SPICE… 
1986
1986
Time- and voltage-dependent currents in locust ocellar L-neurones
Summary1.Current-clamp and voltage-clamp experiments were performed on L-neurones in the median ocellar nerve of locusts (Locusta… 
1983
1983
High-density and reduced latchup susceptibility CMOS technology for VLSI
Increasing layout density and reducing susceptibility to latchup are two of the most pressing concerns in making CMOS a superior… 
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