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........................................................................................................................................... i Acknowledgments........................................................................................................................... ii List of Abbreviations ..................................................................................................................... vi
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC… Expand
High-reliability performance of a Q-band MMIC amplifier fabricated using TRW’s 0.1 µm production AlGaAs/GaAs HEMT process… Expand
Traditionally a majority of the commercial satellite communications systems have been fixed repeaters at C-band and Ku-band. The… Expand
This paper exhibits experimental and theoret- ical results on metamorphic high-electron mobility transistor (MM-HEMT). Modeling… Expand
In spite of their outstanding transport characteristics, InP high-electron mobility transistors (HEMTs) deliver lower output… Expand
We show that the "Nonlinear Network Measurement System" allows to accurately measure the real-time degradation of microwave… Expand
This paper estimates the noise temperature as a function of frequency for amplifiers covering the 1 to 10 GHz range utilizing… Expand
A low-noise monolithic pseudomorphic HEMT drain mixer working in the Ku-band is reported. The RF frequency band is from 14 to 17… Expand
High-yield W-band monolithic microwave integrated circuits (MMICs), namely, a three-stage low-noise amplifier (LNA) and a… Expand