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Haliclona cf. caerulea Caribbean StT 14

National Institutes of Health

Papers overview

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Highly Cited
2019
Highly Cited
2019
13.3 A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique
STT-MRAM has been emerging as a very-promising high-density embedded non-volatile memory (eNVM) [1], [2]. Embedded Flash memory… Expand
Highly Cited
2018
Highly Cited
2018
Two-terminal spin–orbit torque magnetoresistive random access memory
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to existing random access… Expand
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Highly Cited
2015
Highly Cited
2015
A new spin on magnetic memories.
Solid-state memory devices with all-electrical read and write operations might lead to faster, cheaper information storage. 
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Highly Cited
2014
Highly Cited
2014
Read disturb fault detection in STT-MRAM
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has potential to become a universal memory technology because of… Expand
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Highly Cited
2014
Highly Cited
2014
A 16 Kb Spin-Transfer Torque Random Access Memory With Self-Enable Switching and Precharge Sensing Schemes
Spin-transfer torque magnetic random access memory (STT-MRAM) is considered one of the most promising non-volatile memory… Expand
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Highly Cited
2014
Highly Cited
2014
Variation-Tolerant and Disturbance-Free Sensing Circuit for Deep Nanometer STT-MRAM
This paper presents a high reliability sensing circuit for the deep nanometer spin-transfer torque magnetic random-access memory… Expand
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Highly Cited
2013
Highly Cited
2013
The Desired Memristor for Circuit Designers
Memristors are two-terminal devices with varying resistance, where the behavior is dependent on the history of the device. In… Expand
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Review
2012
Review
2012
VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY IN SPINTRONIC DEVICES
Electric-field-control of magnetism can dramatically improve the energy efficiency of spintronic devices and enhance the… Expand
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Highly Cited
2011
Highly Cited
2011
Development of Embedded STT-MRAM for Mobile System-on-Chips
Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) has been considered a promising technology for future… Expand
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Review
2008
Review
2008
Spin-Transfer Torque MRAM (STT-MRAM): Challenges and Prospects
Spin-transfer torque (STT) switching demonstrated in submicron sized magnetic tunnel junctions (MTJs) has stimulated considerable… Expand
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