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Glucose challenge panel:-:Pt:Exhl gas:Qn

Known as: Panel de provocación con glucosa:Propiedades mixtas (sólo paneles):Punto temporal:Gas espirado:Qn, ???????:-:???:?????:???, Glukoz giri?imli panel:-:Zml?:Soln at?lan gaz:Kant 
 
National Institutes of Health

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7 relations
Challenge testsGasesGlucoseGlucose challenge
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Glucose challenge:Imp:Pt:Exhl gas:NomGlucose.PO:Mass:Pt:Dose:Qn

Papers overview

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2015
2015
Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology
The high-frequency performance of a novel SiGe heterojunction bipolar transistor (HBT) module with monocrystalline base link is… Expand
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2008
2008
Electrical Behavior and Technology Optimization of Si/SiGeC HBTs on Thin-Film SOI
A growing interest has been focused on silicon on insulator (SOI) technologies over the past years. Yet, few studies were carried… Expand
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2008
2008
Limitations of current compact transit-time models for III–V-based HBTs
  • M. Rudolph
  • IEEE MTT-S International Microwave Symposium…
  • 2008
    • Corpus ID: 39399494
This paper investigates the accuracy limitations of common compact bipolar transistor models towards higher frequencies. The… Expand
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2007
2007
Evidence for clinical and genetic heterogeneity in hereditary benign telangiectasia.
BACKGROUND Telangiectases are abnormal dilatations of end vessels in the subpapillary plexus of the papillary dermis. Hereditary… Expand
2007
2007
High Resolution Thermal Imaging for Electrical and Optical Characterization of Electronic and Photonic Devices.
 
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2005
2005
Documentation of the FBH HBT Model
The GaAs-HBT technology nowadays is a standard technology, which is readily available to circuit designers. However, while at… Expand
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2003
2003
HBT-Analyzer - Particle Correlations Analysis Toolkit
The HBT-Analyzer is an universal tool for particle correlations analysis under the ROOT environment. It provides an efficient… Expand
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2003
2003
Submicron InP-based HBTs for Ultra-high Frequency Amplifiers
Transistor bandwidths are approaching terahertz frequencies. Paramount to high speed transistor operation is submicron device… Expand
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2002
2002
Investigation of He + -ion bombardment in the fabrication of planar InP/ InGaAs HBT structure
We have investigated He+-ion bombardment on lattice-matched multi-layer InP/ In0.53Ga0.47As and In0.5Ga0.5P/ GaAs heterojunction… Expand
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1996
1996
A 2-50 GHz InAlAs/InGaAs-InP HBT distributed amplifier
Here we report on a 2-50 GHz InAlAs/InGaAs-InP HBT Distributed Amplifier (DA) which demonstrates the highest frequency of… Expand
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