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Glucose challenge panel:-:Pt:Exhl gas:Qn

Known as: Panel de provocación con glucosa:Propiedades mixtas (sólo paneles):Punto temporal:Gas espirado:Qn, ???????:-:???:?????:???, Glukoz giri?imli panel:-:Zml?:Soln at?lan gaz:Kant 
National Institutes of Health

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7 relations
Challenge testsGasesGlucoseGlucose challenge

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Glucose challenge:Imp:Pt:Exhl gas:NomGlucose.PO:Mass:Pt:Dose:Qn

Papers overview

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2016
2016
Comparison of the Effects of the Selective Estrogen Receptor Modulators Ospemifene, Raloxifene, and Tamoxifen on Breast Tissue in Ex Vivo Culture.
Explant tissue culture provides a model for studying the direct effects of steroid hormones, their analogs, and novel hormonally… 
2015
2015
”Du hade inte funnits om inte jag fanns.” Om lesbiska mammors identitetsskapande
Problem/Bakgrund: Det rader babyboom bland lesbiska par i Sverige men det finns ytterst lite informationsmaterial som vander sig… 
2008
2008
Electrical Behavior and Technology Optimization of Si/SiGeC HBTs on Thin-Film SOI
A growing interest has been focused on silicon on insulator (SOI) technologies over the past years. Yet, few studies were carried… 
2007
2007
High Resolution Thermal Imaging for Electrical and Optical Characterization of Electronic and Photonic Devices.
2005
2005
Documentation of the FBH HBT Model
The GaAs-HBT technology nowadays is a standard technology, which is readily available to circuit designers. However, while at… 
2005
2005
Analysis of lateral current spreading in collector of submicron HBT
Recently, InP HBTs with submicron emitter showed high cutoff frequency. In this simulation, cutoff frequency when emitter width… 
2003
2003
Submicron InP-based HBTs for Ultra-high Frequency Amplifiers
Transistor bandwidths are approaching terahertz frequencies. Paramount to high speed transistor operation is submicron device… 
2002
2002
Investigation of He + -ion bombardment in the fabrication of planar InP/ InGaAs HBT structure
We have investigated He+-ion bombardment on lattice-matched multi-layer InP/ In0.53Ga0.47As and In0.5Ga0.5P/ GaAs heterojunction… 
2000
2000
(λ/4±δ)長先端開放スタブ共振器を用いた低位相雑音38GHz HBT MMIC発振器
1996
1996
A 2-50 GHz InAlAs/InGaAs-InP HBT distributed amplifier
Here we report on a 2-50 GHz InAlAs/InGaAs-InP HBT Distributed Amplifier (DA) which demonstrates the highest frequency of… 
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