Gallium Arsenide Lasers

Known as: Gallium Arsenide Laser, Lasers, GaAs, Arsenide Laser, Gallium 
 
National Institutes of Health

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Highly Cited
2009
Highly Cited
2009
RF MEMS technology was initially developed as a replacement for GaAs HEMT switches and p-i-n diodes for low-loss switching… (More)
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Highly Cited
2008
Highly Cited
2008
A record high-performance GaAs high-voltage HBT (HVHBT)-based WCDMA base-station power amplifier is presented, which uses an… (More)
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Highly Cited
2005
Highly Cited
2005
Highly integrated transmitter and receiver MMICs have been designed in a commercial 0.15 /spl mu/m, 88 GHz f/sub T//183 GHz f/sub… (More)
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2005
2005
The accurate determination of the channel temperature in field-effect transistors (FETs) and monolithic microwave integrated… (More)
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Highly Cited
2005
Highly Cited
2005
We demonstrate a 36 times 12 times 0.9mm3 sized compact monolithic LTCC SiP transmitter (Tx) for 60GHz-band wireless… (More)
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2005
2005
We present a new low-frequency noise model of a GaInP-GaAs HBT and the associated extraction process from measurements. Specific… (More)
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2004
2004
In this paper, we present integrated circuit solutions that enable high-speed data transmission over legacy systems such as short… (More)
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Highly Cited
1992
Highly Cited
1992
A new large signal model for HEMT’s and MESFET’s, capable of ,modeling the current-voltage characteristic and its derivatives… (More)
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Highly Cited
1979
Highly Cited
1979
As a basis for designing GSAS MESFET’S for broad-band low-noise mnpfMe~ tbe fundarnentaf relationships between basic device… (More)
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Highly Cited
1979
Highly Cited
1979
The optimal value of the minimum noise figure Foof GaAs MESFET's is expressed in terms of either representative equivalent… (More)
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