Frenkel Russe syndrome

Since the demonstration of superlow friction (superlubricity) in graphite at nanoscale, one of the main challenges in the field… (More)

Dependence of gate leakage current on Al mole fraction of AlGaN/GaN high-electron mobility transistors (HEMTs) is studied using… (More)

A deeper understanding of the noise and variability sources in resistive switching memory (RRAM) is needed for device improvement… (More)

The gate leakage mechanisms in AlInN/GaN and AlGaN/GaN high electron mobility transistors (HEMTs) are compared using temperature… (More)

We present a new physical model for electrical conduction and switching in the amorphous phase of phase change memory (PCM… (More)

Understanding the effect of size scaling on resistance window in phase-change memory (PCM) requires accurate models for… (More)

The quasicontinuum approximation [1] is a method to reduce the atomistic degrees of freedom of a crystalline solid by piecewise… (More)

In this paper, bottom-oxide thickness (Tbo) and program/erase stress effects on charge retention in SONOS Flash memory cells with… (More)

We prove a vanishing theorem of the cohomology arising from the two quantized Drinfeld-Sokolov reductions (“+” and “−” reduction… (More)

– We propose a simple configuration of a one-dimensional parallel array of Josephsonjunctions in which the pinning potential for… (More)