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Deoxyribonuclease SsoI

Known as: Endonuclease SsoI 
 
National Institutes of Health

Related topics

Related topics

1 relation
Deoxyribonuclease EcoRI

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
Experimental Investigation on Alloy Scattering in sSi/ ${\rm Si}_{0.5}{\rm Ge}_{0.5}$/sSOI Quantum-Well p-MOSFET
  • W. Yu, W. Wu, +8 authors Q. Zhao
  • IEEE Transactions on Electron Devices
  • 2014
    • Corpus ID: 36025431
Alloy scattering in a sSi/Si<sub>0.5</sub>Ge<sub>0.5</sub>/strained Silicon on Insulator (SOI) (sSOI) quantum-well (QW) p-MOSFET… Expand
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Highly Cited
2013
Highly Cited
2013
Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width
A detailed study of performance in uniaxially strained Si nanowire (NW) transistors fabricated by lateral strain relaxation of… Expand
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2013
2013
Strained SOI FINFET SRAM Design
Impact of strained silicon effects in double-gated FinFET structures on static random access memory (SRAM) cell functionality is… Expand
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2012
2012
Strain-induced performance enhancement of tri-gate and omega-gate nanowire FETs scaled down to 10nm Width
A detailed study of performance in uniaxially-strained Si nanowire (NW) transistors fabricated by lateral strain relaxation of… Expand
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2012
2012
High Performance FDSOI MOSFETs and TFETs Using SiGe Channels and Raised Source and Drain
The interest of the Dual Channel CMOS integration scheme, which features SiGe channels for p-type and Si channels n-type MOSFETs… Expand
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2010
2010
Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts.
We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires… Expand
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2010
2010
High performance and low variability fully-depleted strained-SOI MOSFETs
In this paper, we demonstrate high performance Fully Depleted Silicon-On-Insulator CMOS on 300mm strained SOI (sSOI) wafers. Up… Expand
2010
2010
MOSFETs with high mobility channel materials and higher-k/metal gate stack
Integration of lanthanum lutetium oxide (LaLuO<inf>3</inf>) with a к value of 30 is demonstrated on high mobility biaxially… Expand
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2009
2009
Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels
We have successfully fabricated uniaxially strained SOI (SSOI) FinFETs with high electron mobility and low parasitic resistance… Expand
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Highly Cited
2002
Highly Cited
2002
Electron and hole mobility enhancement in strained SOI by wafer bonding
N- and p-MOSFETs have been fabricated in strained Si-on-SiGe-on-insulator (SSOI) with high (15-25%) Ge content. Wafer bonding and… Expand
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