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Deoxyribonuclease SsoI
Known as:
Endonuclease SsoI
National Institutes of Health
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Related topics
Related topics
1 relation
Deoxyribonuclease EcoRI
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
Experimental Investigation on Alloy Scattering in sSi/ ${\rm Si}_{0.5}{\rm Ge}_{0.5}$/sSOI Quantum-Well p-MOSFET
W. Yu
,
W. Wu
,
+8 authors
Q. Zhao
IEEE Transactions on Electron Devices
2014
Corpus ID: 36025431
Alloy scattering in a sSi/Si<sub>0.5</sub>Ge<sub>0.5</sub>/strained Silicon on Insulator (SOI) (sSOI) quantum-well (QW) p-MOSFET…
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Highly Cited
2013
Highly Cited
2013
Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width
R. Coquand
,
M. Cassé
,
+8 authors
T. Poiroux
IEEE Transactions on Electron Devices
2013
Corpus ID: 42367654
A detailed study of performance in uniaxially strained Si nanowire (NW) transistors fabricated by lateral strain relaxation of…
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2013
2013
Strained SOI FINFET SRAM Design
P. Kerber
,
R. Kanj
,
R. V. Joshi
IEEE Electron Device Letters
2013
Corpus ID: 26548505
Impact of strained silicon effects in double-gated FinFET structures on static random access memory (SRAM) cell functionality is…
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2012
2012
Strain-induced performance enhancement of tri-gate and omega-gate nanowire FETs scaled down to 10nm Width
R. Coquand
,
M. Cassé
,
+19 authors
T. Poiroux
Symposium on VLSI Technology (VLSIT)
2012
Corpus ID: 38941677
A detailed study of performance in uniaxially-strained Si nanowire (NW) transistors fabricated by lateral strain relaxation of…
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2012
2012
High Performance FDSOI MOSFETs and TFETs Using SiGe Channels and Raised Source and Drain
C. Le Royer
,
A. Villalon
,
+4 authors
B. Previtali
International Silicon-Germanium Technology and…
2012
Corpus ID: 43535338
The interest of the Dual Channel CMOS integration scheme, which features SiGe channels for p-type and Si channels n-type MOSFETs…
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2010
2010
Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts.
S. Habicht
,
Q. Zhao
,
+4 authors
S. Mantl
Nanotechnology
2010
Corpus ID: 12814967
We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires…
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2010
2010
High performance and low variability fully-depleted strained-SOI MOSFETs
J. Mazurier
,
O. Weber
,
+9 authors
O. Faynot
IEEE International SOI Conference (SOI)
2010
Corpus ID: 42665295
In this paper, we demonstrate high performance Fully Depleted Silicon-On-Insulator CMOS on 300mm strained SOI (sSOI) wafers. Up…
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2010
2010
MOSFETs with high mobility channel materials and higher-k/metal gate stack
W. Yu
,
E. D. Ozben
,
+10 authors
S. Mantl
10th IEEE International Conference on Solid-State…
2010
Corpus ID: 14050058
Integration of lanthanum lutetium oxide (LaLuO<inf>3</inf>) with a к value of 30 is demonstrated on high mobility biaxially…
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2009
2009
Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels
T. Irisawa
,
K. Okano
,
+6 authors
S. Takagi
IEEE Transactions on Electron Devices
2009
Corpus ID: 9187180
We have successfully fabricated uniaxially strained SOI (SSOI) FinFETs with high electron mobility and low parasitic resistance…
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Highly Cited
2002
Highly Cited
2002
Electron and hole mobility enhancement in strained SOI by wafer bonding
L. Huang
,
J. Chu
,
+8 authors
H. P. Wong
2002
Corpus ID: 13879246
N- and p-MOSFETs have been fabricated in strained Si-on-SiGe-on-insulator (SSOI) with high (15-25%) Ge content. Wafer bonding and…
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