Dark current spectroscopy

Known as: DCS 
Dark Current Spectroscopy is a technique that is used to determine contaminants in silicon.
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2016
2016
Dark Current Spectroscopy is tested for the first time on irradiated CMOS Image sensors (CIS) to detect and identify radiation… (More)
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2016
2016
Dark current spectroscopy is tested on twenty CMOS image sensors irradiated with protons, neutrons and various ions at different… (More)
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2016
2016
Mixed phase nanocrystalline/amorphous-silicon (nc/a-Si:H) thin films with band-gap higher than bulk silicon are prepared by… (More)
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2015
2015
Dark Current Spectroscopy of radiation-induced defects is tested for the first time in CMOS Image Sensors. Several dark current… (More)
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2013
2013
Introduction The Quality by Design (QbD) approach shows significant benefit in classical pharmaceutical industry and is now on… (More)
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2010
2010
A per-pixel dark current spectroscopy measurement and analysis technique for identifying deep-level traps in CMOS imagers is… (More)
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2010
2010
The dark current in CMOS Image Sensors induced by deliberate contamination with tungsten ion implantation is studied with the… (More)
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2008
2008
Dark current spectroscopy is used to directly investigate deep-level traps induced by alpha particle irradiation in charge… (More)
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2008
2008
Experimental μ-Raman spectroscopy (μRS) results are used to determine the appropriate plastic yield criterion for an accurate… (More)
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2001
2001
Transient current spectroscopy is proposed and demonstrated in order to investigate the energy relaxation inside a quantum dot in… (More)
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