Arenibacter sp. MBE 61
National Institutes of Health
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PENGEMBANGAN PERANGKAT LUNAK PARAMETER PROSES MBE-P3TM. Telah dilakukan analisis, perancangan dan pembuatan program komputer…
碲锌镉 CdZnTe（211）B 衬底广泛应用于碲镉汞（HgCdTe）分子束外延生长，其性能参数在很大程度上决定了碲镉汞分子束外延材料的质量。主要讨论了 CdZnTe（211）B 衬底几个关键性能参数对碲镉汞外延材料的影响，包括 Zn…
We have performed a detailed quantitative structural analysis of epitaxial [Fe(3 nm)/Cr(1.2 nm)]{sub 20} superlattices by low…
The study on As 4-doped HgCdTe epilayers grown by MBE was presented. The electrical activation of arsenic impurities was achieved…
We explored two methods to obtain laterally ordered Ge/Si quantum dot arrays. For the first we exploit the two independent growth…
ZnSe-based II-VI semiconductors represent an area of intense research, due to their promise as blue emitters for high-density…
在10K低温下对分子束外延生长的CdTe（111）B/GaAs（100）和CdTe（211）B/GaAs（211）B外延膜进行了光致发光（PL）测量，得到了PL谱和带边激子辐射的精细结构。