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ABCD1 protein, human

Known as: ALDP protein, human, X-ALD protein, human, X-ALD protein 
National Institutes of Health

Related topics

Related topics

2 relations
ABCD1 gene

Broader (1)

ATP-Binding Cassette Transporters

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited Al 2 O 3 as Gate Dielectric
GaSb inversion-mode PMOSFETs with atomiclayer-deposited (ALD) Al2O3 as gate dielectric are demonstrated. A 0.75-μm-gate-length… 
2015
2015
Micromechanical characterization of ALD thin films
Aalto University, P.O. Box 11000, FI-00076 Aalto www.aalto.fi Author Maria Berdova Name of the doctoral dissertation… 
2014
2014
Implementation of an ALD-Al2O3 PERC-Technology into a Multi- and Monocrystalline Industrial Pilot Production
2013
2013
Improving high-capacity Li 1 . 2 Ni 0 . 15 Mn 0 . 55 Co 0 . 1 O 2-based lithium-ion cells by modi fi ying the positive electrode with alumina
< Positive electrodes in Li-ion fullcells are modified by thin Al2O3 coatings and alumina powder. < ALD-Al2O3 coatings (<4 nm… 
2012
2012
Flexible and Conformal Thermal Ground Planes
Abstract : We report novel flexible thermal ground planes (FTGPs) based on heat pipe technology. FTGP's effective thermal… 
2011
2011
GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited Al 2 O 3 as Gate Dielectric
GaSb inversion-mode PMOSFETs with atomiclayer-deposited (ALD) Al2O3 as gate dielectric are demonstrated. A 0.75-μm-gate-length… 
2006
2006
Characteristics of SiO 2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors
SiO2 films were prepared by atomic layer deposition (ALD) technique, and their physical and electrical properties were… 
2006
2006
Dielectric Relaxation of ALD HfO2 Thin Films from 1 kHz to 5 GHz
Review
2004
Review
2004
Opportunities and challenges for high-k gate dielectrics
Some key issues related to the development of high-k dielectric technology, including gate stack processing, formation of… 
1988
1988
A New Device Structure Utilizing Atomic Layer Doping (ALD) Technology in Si Systems
A new device structure utilizing an Atomic Layer Doping (ALD) technology in Si systems is presented. The ALD technology enables… 
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