p-Type doping of SiC by high dose Al implantation—problems and progress

@inproceedings{Heera2001pTypeDO,
  title={p-Type doping of SiC by high dose Al implantation—problems and progress},
  author={Viton Heera and Danny Panknin and Wolfgang Skorupa},
  year={2001}
}
The development of optimized processes for p-type doping of SiC by ion implantation and subsequent annealing is a remaining challenge to SiC-device technology. Al is a promising acceptor in SiC. Compared to B it has a shallower acceptor level and a stronger tendency to occupy atomic sites in the Si sublattice which makes Al more suitable for the production of heavily doped, low resistivity layers. However, also in the case of Al very high acceptor concentrations (>10 19 cm -3 ) are necessary to… CONTINUE READING

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