n-type doping of oxides by hydrogen

@article{Kl2002ntypeDO,
  title={n-type doping of oxides by hydrogen},
  author={Ç. Kılıç and A. Zunger},
  journal={Applied Physics Letters},
  year={2002},
  volume={81},
  pages={73-75}
}
  • Ç. Kılıç, A. Zunger
  • Published 2002
  • Chemistry
  • Applied Physics Letters
  • First-principles total-energy calculations suggest that interstitial hydrogen impurity forms a shallow donor in SnO2, CdO, and ZnO, but a deep donor in MgO. We generalize this result to other oxides by recognizing that there exist a “hydrogen pinning level” at about 3.0±0.4 eV below vacuum. Materials such as Ag2O, HgO, CuO, PbO, PtO, IrO2, RuO2, PbO2, TiO2, WO3, Bi2O3, Cr2O3, Fe2O3, Sb2O3, Nb2O5, Ta2O5, FeTiO3, and PbTiO3, whose conduction band minimum (CBM) lie below this level (i.e., electron… CONTINUE READING
    228 Citations

    Figures from this paper.

    Complex centers of hydrogen in tin dioxide
    • 2
    Hydrogen in oxide semiconductors
    • 36
    • PDF
    Acceptors in ZnO
    • 37
    Chapter Eight – Point Defects in ZnO
    • 9

    References

    SHOWING 1-10 OF 18 REFERENCES