n dependence of the valence-band offset in (GaAs)n(AlAs)n: Role of charge redistribution, interface dipoles, and cation 3d states.

@article{Massidda1988nDO,
  title={n dependence of the valence-band offset in (GaAs)n(AlAs)n: Role of charge redistribution, interface dipoles, and cation 3d states.},
  author={Massidda and Min and H Freeman},
  journal={Physical review. B, Condensed matter},
  year={1988},
  volume={38 2},
  pages={
          1291-1295
        }
}
A systematic study of the binding energy of core levels in (GaAs${)}_{\mathrm{n}}$(AlAs${)}_{\mathrm{n}}$ (001) superlattices (n\ensuremath{\le}3) was performed in order to assess the role of interface effects in the stabilization of the valence-band offset, \ensuremath{\Delta}${E}_{v}$, at the lattice-matched common-anion GaAs/AlAs (001) interface. Core levels were obtained from self-consistent all-electron local-density band-structure calculations of the superlattices. Sizable differences… CONTINUE READING
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