# g -factor of electrons in gate-defined quantum dots in a strong in-plane magnetic field

@article{Stano2018gO,
title={g
-factor of electrons in gate-defined quantum dots in a strong in-plane magnetic field},
author={Peter Stano and Chen-Hsuan Hsu and Marcel Serina and Leon C. Camenzind and Dominik M. Zumbuhl and Daniel Loss},
journal={Physical Review B},
year={2018}
}
• P. Stano, +3 authors D. Loss
• Published 12 August 2018
• Physics
• Physical Review B
We analyze orbital effects of an in-plane magnetic field on the spin structure of states of a gated quantum dot based in a two-dimensional electron gas. Starting with a $k\ifmmode\cdot\else\textperiodcentered\fi{}p$ Hamiltonian, we perturbatively calculate these effects for the conduction band of GaAs, up to the third power of the magnetic field. We quantify several corrections to the $g$-tensor and reveal their relative importance. We find that for typical parameters, the Rashba spin-orbit…
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## References

SHOWING 1-10 OF 120 REFERENCES
Electron g factor in one- and zero-dimensional semiconductor nanostructures
• Physics
• 1998
We investigate theoretically the Zeeman effect on the lowest confined electron in quantum wires and quantum dots. A general relation is established between the symmetry of a low-dimensional system
Possible Spin Polarization in a One-Dimensional Electron Gas.
• Thomas, Mace
• Physics, Medicine
Physical review letters
• 1996
The measured enhancement of the $g$ factor as the subbands are depopulated suggests that the 0.7 structure'' is induced by electron-electron interactions.
Spin and cyclotron energies of electrons in GaAs ∕ Ga 1 − x Al x As quantum wells
• Physics
• 2006
A five-level $\mathbf{P}∙\mathbf{p}$ model of the band structure for $\mathrm{GaAs}$-type semiconductors is used to describe the spin ${g}^{*}$ factor and the cyclotron mass ${m}_{c}^{*}$ of
Anisotropy of spin g factor in Ga As ∕ Ga 1 − x Al x As symmetric quantum wells
• Physics
• 2006
Five-level $\mathbf{k}∙\mathbf{p}$ band model is used to describe the spin $g$ factor of conduction electrons in undoped $\mathrm{Ga}\mathrm{As}∕{\mathrm{Ga}}_{0.65}{\mathrm{Al}}_{0.35}\mathrm{As}$
Electron g -factor of valley states in realistic silicon quantum dots
• Physics
Physical Review B
• 2018
We theoretically model the spin-orbit interaction in silicon quantum dot devices, relevant for quantum computation and spintronics. Our model is based on a modified effective mass approach which
Conduction-band spin splitting of type-I GaxIn1-xAs/InP quantum wells.
• Kowalski, +5 authors Sobkowicz
• Physics, Medicine
Physical review. B, Condensed matter
• 1994
The spin-splitting factor of the electrons at the very bottom of the conduction band in strained As/InP type-I quantum wells is reported and experimental proof of quantum confinement-dependent anisotropy of g is given.
Mechanisms for Strong Anisotropy of In-Plane g-Factors in Hole Based Quantum Point Contacts.
It is shown that there is a new mechanism for the anisotropy related to the existence of an additional B_{+}k_{-}^{4}σ_+} effective Zeeman interaction for holes, which is kinematically different from the standard single Zeeman term B_{-}.
Stretchable persistent spin helices in GaAs quantum wells
The Rashba and Dresselhaus spin-orbit (SO) interactions in 2D electron gases act as effective magnetic fields with momentum-dependent directions, which cause spin decay as the spins undergo arbitrary
Spin-relaxation anisotropy in a GaAs quantum dot.
It is found that the extrema in the T_{1} do not occur when the magnetic field is along the [110] and [11[over ¯]0] crystallographic directions, and this deviation is attributed to an elliptical dot confining potential.
A silicon metal-oxide-semiconductor electron spin-orbit qubit
This work exploits spin-orbit coupling to demonstrate full, all-electrical control of a metal-oxide-semiconductor electron spin qubit, demonstrating that the MOS interface inherently provides properties for two-axis qubit control, while not increasing noise relative to other material choices.