a-SiGeC:H solar cells fabricated near the threshold of the amorphous-to-crystalline transition for narrow gap solar cells and its improvement by modifying interfaces

@article{Kim2011aSiGeCHSC,
  title={a-SiGeC:H solar cells fabricated near the threshold of the amorphous-to-crystalline transition for narrow gap solar cells and its improvement by modifying interfaces},
  author={Do Yun Kim and Tomohiro Yoshihara and Liping Zhang and Sichanugrist Porponth and Makoto Konagai},
  journal={2011 37th IEEE Photovoltaic Specialists Conference},
  year={2011},
  pages={003584-003587}
}
a-SiGeC:H thin films have been deposited over a broad range of MMG/SiH<inf>4</inf> and H<inf>2</inf>/SiH<inf>4</inf> gas flow ratios. It was observed that the optical band-gap (E<inf>opt</inf>) of the films was gradually reduced as either MMG/SiH<inf>4</inf> or H<inf>2</inf>/SiH<inf>4</inf> increases. Then, a-SiGeC:H solar cells containing less carbon were fabricated near the threshold of amorphous-to-crystalline transition for the fabrication of narrow-gap solar cells, because high H<inf>2… CONTINUE READING