ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect.

Abstract

A zinc oxide nanowire (ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was… (More)
DOI: 10.1088/0957-4484/21/11/115205

4 Figures and Tables

Topics

  • Presentations referencing similar topics