ZnO Thin-Film Transistor Ring Oscillators with 31-ns Propagation Delay

@article{Sun2008ZnOTT,
  title={ZnO Thin-Film Transistor Ring Oscillators with 31-ns Propagation Delay},
  author={Jie Sun and D A Mourey and Dalong A. Zhao and Sung Kyu Robin Park and S. Nelson and Daniel Levy and D. Freeman and P. Cowdery-Corvan and Lee W. Tutt and T B Jackson},
  journal={IEEE Electron Device Letters},
  year={2008},
  volume={29},
  pages={721-723}
}
We have fabricated ring oscillators (ROs) using ZnO thin films deposited by using a spatial atomic layer deposition process at atmospheric pressure and low temperature (200degC). Bottom-gate thin-film transistors with aluminum source and drain contacts were fabricated with a field-effect mobility of > 15 cm2/V ldr s. Seven-stage ROs operated at a frequency as high as 2.3 MHz for a supply voltage of 25 V, corresponding to a propagation delay of 31 ns/stage. These circuits also had propagation… CONTINUE READING
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