ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology

@article{Bakin2010ZnOGaNHH,
  title={ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology},
  author={Andrey Bakin and Arne Behrends and Andreas Waag and H. J. Lugauer and Ansgar Laubsch and Klaus Streubel},
  journal={Proceedings of the IEEE},
  year={2010},
  volume={98},
  pages={1281-1287}
}
Reliable and reproducible p-type doping is the main challenge for fabricating highly efficient ZnO-based light-emitting diodes. During the last few years, the lack of reliable p-type conductivity in ZnO has initiated research concerning the combination of ZnO and other semiconductors, which can then be doped p-type. One of these concepts is the combination of ZnO with GaN heterostructures aiming at the fabrication of hybrid LEDs. We discuss the problems as well as potential benefits from a… Expand
GaN and ZnO nanostructures
GaN and ZnO are both wide band gap semiconductors with interesting properties concerning optoelectronic and sensor device applications. Due to the lack or the high costs of native substrates,Expand
Well-aligned hydrothermally synthesized zinc oxide nanorods on p-gan without a seed layer
Zinc oxide nanorods have great potential for the realization of high efficiency heterostructure LEDs based on p-doped gallium nitride. In order to obtain a good confinement of the light, aExpand
Transparent conductive Ga-doped ZnO films fabricated by MOCVD
Transparent conductive oxides (TCOs) are used for a variety of different applications, e.g., in solar cells and light emitting diodes (LEDs). Mostly, sputtering is used, which often results in aExpand
Improved LEDs and photovoltaics by hybridization & and nanostructuring
Since the development of p-type doping of gallium nitride (GaN) in the early 1990s,1–4 there has been rapid industrial development for optoelectronic devices based on alloys of GaN with aluminum andExpand
High-performance ultraviolet photodetectors based on CdS/CdS:SnS2 superlattice nanowires.
TLDR
The results indicate that CdS/CdS:SnS2 superlattice nanowires are very promising potential candidates in nanoscale electronic and optoelectronic devices. Expand
Effect of the doping level on the radiative life time in ZnO nanowires
The emission properties of ZnO nanowires grown by metal organic vapor phase epitaxy on sapphire and p-type GaN are compared using temperature dependent time resolved photoluminescence. TheExpand
Enhancement in photoluminescence performance of carbon-decorated T-ZnO.
TLDR
Under proper experiment conditions, the carbon decorating leads to dramatically enhanced luminescence intensity of T-ZnO from 400 to 700 nm compared with no carbon decorated, which elevates this approach to a simple and effective method for the betterment of fluorescent materials in practical applications. Expand
Optoelectronic properties of semiconductor nanowires
In this chapter, optoelectronic properties of semiconductor nanowires, the fundament of the nanowire optoelectronic devices, will be analyzed. This chapter focuses on the photodetecting properties ofExpand
Superior visible-light assisted water splitting performance by Fe incorporated ZnO photoanodes
Abstract Transition metal ion incorporation has been emerged as an effective stratagem to enhance the performance of metal oxide photoanodes. In the present work, we design and fabricate the plainExpand
Synthesizing tubular and trapezoidal shaped ZnO nanowires by an aqueous solution method.
TLDR
The proposed methods hold potential for new developments in piezotronics and piezophotonics by allowing fabrication of nanodevices in the inner region of the hollow nanowires and nanotubes. Expand
...
1
2
3
...

References

SHOWING 1-10 OF 69 REFERENCES
A hybrid green light-emitting diode comprised of n-ZnO/ "InGaN/GaN… multi-quantum-wells/p-GaN
Hybrid green light-emitting diodes (LEDs) comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN were grown on semi-insulating AlN/sapphire using pulsed laser deposition for the n-ZnO and metalExpand
ZnO-Based Semiconductors as Building Blocks for Active Devices
This article provides a review of materials and devices of wide-bandgap oxide semiconductors based on ZnO, highlighting the nature of the chemical bond. The electronic structures of these materialsExpand
The Future Of ZnO Light Emitters
Compact, solid-state UV emitters have many potential applications, and ZnO-based materials are ideal for the wavelength range 390 nm and lower. However, the most efficient solid-state emitters areExpand
Materials characterization of n - ZnO / p - GaN : Mg / c - Al2O3 UV LEDs grown by pulsed laser deposition and metal–organic chemical vapor deposition
Abstract n-ZnO/p-GaN:Mg hybrid heterojunctions grown on c-Al2O3 substrates showed 375 nm room temperature electroluminescence. It was suggested that the high materials and interface quality obtainedExpand
Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution
We report a dramatic increase in the light extraction efficiency of GaN-based blue light-emitting diodes(LEDs) by ZnOnanorod arrays on a planar indium tin oxide (ITO) transparentExpand
Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology
An n-ZnO/p-ZnO : Sb homojunction light emitting diode was fabricated on c-plane sapphire by metal–organic chemical vapour deposition (MOCVD). The p-type ZnO layer with a hole concentration of 1.27 ×Expand
ZnMgO‐ZnO quantum wells embedded in ZnO nanopillars: Towards realisation of nano‐LEDs
ZnO thin films, ZnMgO/ZnO heterostructures and ZnO nanostructures were fabricated using molecular beam epitaxy (MBE), vapour phase transport (VPT) and an aqueous chemical growth approach (ACG). TheExpand
Controlled low-temperature fabrication of ZnO nanopillars with a wet-chemical approach
Aqueous chemical growth (ACG) is an efficient way to generate wafer-scale and densely packed arrays of ZnO nanopillars on various substrate materials. ACG is a low-temperature growth approach that isExpand
Dielectric passivation effects on ZnO light emitting diodes
Plasma-enhanced chemical vapor-deposited SiO2 and SiNx were used to passivate ZnO heterojunction light emitting diodes (LEDs). Postdielectric deposition annealing was critical in obtaining good LEDExpand
Investigation of ZnO nanopillars fabrication in a new Thomas Swan close coupled showerhead MOCVD reactor
TLDR
It is shown that the density, length and diameter can be controlled choosing appropriate growth parameters and the influence of different growth parameters including growth time, VI/II-ratio, substrate temperature and reactor pressure on the shape of the nanostructures is investigated. Expand
...
1
2
3
4
5
...