Zinc Tin Oxide Thin-Film-Transistor Enhancement/Depletion Inverter

@article{Heineck2009ZincTO,
  title={Zinc Tin Oxide Thin-Film-Transistor Enhancement/Depletion Inverter},
  author={D. P. Heineck and B. R. McFarlane and J. F. Wager},
  journal={IEEE Electron Device Letters},
  year={2009},
  volume={30},
  pages={514-516}
}
A fabrication process to create a zinc tin oxide (ZTO) thin-film-transistor (TFT) enhancement/depletion inverter using 15-mum channel lengths is developed. Both enhancement- and depletion-mode staggered bottom-gate ZTO TFTs are simultaneously fabricated on a single substrate using a single sputter target and postdeposition anneal step. At a rail voltage of 10 V, this inverter has a gain of 10.6 V/V. 
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