Zhang et al. reply.

Abstract

Magnetoresistance exhibited by non-magnetic semiconductors has attracted much attention. In particular, Wan et al. reported roomtemperature magnetoresistance in silicon to reach 10% at 0.07 T and 150,000% at 7 T—‘‘an intrinsically spatial effect’’. Their supply voltage was approximately 10V (ref. 12), which is low and approaches the industrial requirement… (More)
DOI: 10.1038/nature12590

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Cite this paper

@article{Zhang2013ZhangEA, title={Zhang et al. reply.}, author={X Zh Zhang and C. H. Wan and X. L. Gao and J Wang and Xiao Yun Tan}, journal={Nature}, year={2013}, volume={501 7468}, pages={E1-2} }