Zero-bias 40Gbit/s germanium waveguide photodetector on silicon.

Abstract

We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated… (More)
DOI: 10.1364/OE.20.001096

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