X-ray photoemission study of NiS_{2-x}Se_x (x = 0.0 - 1.2)

@article{Krishnakumar2003XrayPS,
  title={X-ray photoemission study of NiS\_\{2-x\}Se\_x (x = 0.0 - 1.2)},
  author={Sunanda Krishnakumar and D. D. Sarma Solid State and Structural Chemistry Unit and Indian Institute of Science and Bangalore Jawaharlal Nehru Center for Advanced Scientific Research and Bangalore},
  journal={Physical Review B},
  year={2003}
}
Electronic structure of NiS_{2-x}Se_x system has been investigated for various compositions (x) using x-ray photoemission spectroscopy. An analysis of the core level as well as the valence band spectra of NiS_2 in conjunction with many-body cluster calculations provides a quantitative description of the electronic structure of this compound. With increasing Se content, the on-site Coulomb correlation strength (U) does not change, while the band width W of the system increases, driving the… Expand
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References

SHOWING 1-10 OF 31 REFERENCES
Electronic structure of $NiS_{1-x}Se_x$
We investigate the electronic structure of the metallic $NiS_{1-x}Se_x$ system using various electron spectroscopic techniques. The band-structure results do not describe the details of the spectralExpand
Electronic-correlation effects in the x-ray-photoemission spectra of NiS 2
The x-ray-photoemission spectra of the core levels and valence-band region of ${\mathrm{NiS}}_{2}$ is interpreted in terms of a cluster model in the impurity limit. The d-d and p-d charge-fluctuationExpand
Metal-insulator transition in NiS 2-x Se x and the local impurity self-consistent approximation model
Angle-resolved photoemission spectroscopy (ARPES) measurements on NiS{sub 2{minus}x}Se{sub x} single crystals show the evolution of a narrow band near the Fermi level, which develops in the vicinityExpand
First‐Order Raman Scattering in NiS2—xSex
The Raman spectra of the system NiS2—xSex are investigated for x = 0.00, 0.10, 0.20, 0.30, and 0.55, at room temperature and at temperatures below the point where the x = 0.55 sample suffers aExpand
Electronic structure of and covalency driven metal-insulator transition in BaCo 1−x Ni x S 2
We investigate the evolution of the electronic structure across the metal-to-insulator transition in the isostructural series, BaCo 1−x Ni x S 2 , using electron spectroscopic studies. OurExpand
Electronic structure of 3d transition metal pyrites (M = Fe, Co or Ni) by analysis of the M 2p core-level photoemission spectra
We have reinterpreted the metal 2p core-level x-ray photoemission spectra of the 3d transition-metal pyrites , and using a new version of the single-impurity cluster model which includes the effectsExpand
Electronic Properties of NiS2-xSex Single Crystals: From Magnetic Mott−Hubbard Insulators to Normal Metals
The NiS2-xSex system represents one of the best examples of a Mott−Hubbard system, i.e. a system in which, under appropriate conditions of concentration, temperature, or pressure, a metal−insulatorExpand
Core-level spectra of Th compounds.
TLDR
It is found that theshape of the occupied conduction-band density of states influences the shape of the core-level spectrum qualitatively. Expand
Unoccupied electronic states in NiS 2−x Se x across the metal-insulator transition
We investigate the evolution of the electronic structure across the insulator-metal transition in NiS 2−x Se x with changing composition, but in the absence of any structural or magnetic changes. AExpand
Metal-insulator crossover behavior at the surface of NiS 2
We have performed a detailed high-resolution electron spectroscopic investigation of NiS 2 and related Se-substituted compounds, NiS 2−x Se x , which are known to be gapped insulators in the bulkExpand
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