Write voltage and read reference current generator for multi-level Ge2Sb2Te5-based phase change memories with temperature characteristics tracking

@article{Johguchi2013WriteVA,
  title={Write voltage and read reference current generator for multi-level Ge2Sb2Te5-based phase change memories with temperature characteristics tracking},
  author={Koh Johguchi and Toru Egami and Kousuke Miyaji and Ken Takeuchi},
  journal={2013 5th IEEE International Memory Workshop},
  year={2013},
  pages={104-107}
}
This paper gives a write voltage and read reference current generator considering temperature characteristics for multi-level Ge2Sb2Te5-based phase change memories (PCMs). Since the optimum SET and RESET voltages changes by the temperature, the voltage supply circuit must track this characteristic. In addition, the measurement results show that the read… CONTINUE READING