Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror

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@article{MartnMartnez2007WornoutOM, title={Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror}, author={Javier Mart{\'i}n-Mart{\'i}nez and Rosana Rodr{\'i}guez and Montserrat Nafr{\'i}a and Xavier Aymerich and James H. Stathis}, journal={Microelectronics Reliability}, year={2007}, volume={47}, pages={665-668} }