World Smallest 0.34/spl mu/m~ COB Cell 1T1C 64Mb FRAM with New Sensing Architecture and Highly Reliable MOCVD PZT Integration Technology

@article{Kang2006WorldS0,
  title={World Smallest 0.34/spl mu/m~ COB Cell 1T1C 64Mb FRAM with New Sensing Architecture and Highly Reliable MOCVD PZT Integration Technology},
  author={Y. M. Kang and H. J. Joo and J. H. Park and S. K. Kang and Jangyul Robert Kim and S. G. Oh and H. S. Kim and Y. J. Kang and J. Y. Jung and D. Y. Choi and E. S. Lee and S. Y. Lee and H. S. Jeong and Kinam Kim},
  journal={2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.},
  year={2006},
  pages={124-125}
}
We have successfully demonstrated a 0.34mum2 COB cell 1T1C 64Mb FRAM at 150nm technology node. The minimum signal window between data "1" and data "0" of 64M bit cells was evaluated to 300mV at 85degC, 1.6V VDD. This wide signal window was achieved by introducing advanced anneal technology and optimized capacitor layout, from which the variation of individual cell charge was greatly improved, along with robust 2-D stack capacitor technologies such as 70nm thick MOCVD PZT technology with SRO… CONTINUE READING

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