Work function modulation for TiN/Ta/TiN metal gate electrode

Abstract

In this work, the metal gate effective work function (EWF) modulation for the TiN/Ta/TiN/SiO<inf>2</inf>/p-Si(100) structure was investigated. Comparing with TiN/SiO<inf>2</inf>/p-Si(100) structure, after annealing the introduction of Ta can effectively reduce the flat band voltage. It is also revealed that although as the thermal budget increases the flat band voltage obviously shifts toward the negative bias direction, the extracted EWF does not vary too much. An EWF of 4.4 eV is confirmed for TiN/Ta/TiN/SiO<inf>2</inf>/p-Si(100) structure by C-V measurements, which is almost identical to Al/TiN metal gate electrode.

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Showing 1-8 of 8 references

Zawadzki. IEDM Tech. Dig

  • K Mistry, C Allen, +8 authors C.-H Choi
  • 2008
Highly Influential
5 Excerpts

IEEE Electron Dev. Lett

  • Masaru Kadoshima, Takeo Matsuki, Seiichi Miyazaki, Kenji Shiraishi, Toyohiro Chikyo
  • 2009
1 Excerpt

Journal of Semiconductors

  • Bao-Min Wang, Guo-Ping Ru, Yu-Long Jiang, Xin-Ping Qu, Bing-Zong Li, Ran Liu
  • 2009
1 Excerpt

International Technology Roadmap for Semiconductors

  • 2006
1 Excerpt

Symp. VLSI Tech. Dig

  • C Cabral Jr, J Kedzierski, +7 authors R Jammy
  • 2004
1 Excerpt

Tech. Dig. VLSI Symp

  • C Hobbs, L Fonsesca, +14 authors P Tobin
  • 2003
1 Excerpt

IEEE Electron Device Lett

  • R Lin, Q Lu, P Ranade, T.-J King, C Hu
  • 2002
1 Excerpt

Dig

  • H Zhong, S Hong, +4 authors Iedm Tech
  • 2001
1 Excerpt