Wireless communication at 310 GHz using GaAs high-electron-mobility transistors for detection

@article{Blin2013WirelessCA,
  title={Wireless communication at 310 GHz using GaAs high-electron-mobility transistors for detection},
  author={Stephane Blin and Lucie Tohme and Dominique Coquillat and Shogo Horiguchi and Yusuke Minamikata and Shintaro Hisatake and Philippe Nouvel and Thomas Cohen and Annick Penarier and Fabrice Cano and Luca Varani and Wojciech Knap and Tadao Nagatsuma},
  journal={Journal of Communications and Networks},
  year={2013},
  volume={15},
  pages={559-568}
}
We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates up to 8.2 Gbps using a 18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as a detector. This result demonstrates that low-cost commercially-available plasma-wave transistors whose cut-off frequency is far below THz frequencies can be employed in THz communication. Wireless communication over 50 cm is presented at 1.4 Gbps using a uni-travelling-carrier photodiode as a source. Transistor… CONTINUE READING

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