Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping

  title={Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping},
  author={Kenan Zhang and Ke Deng and Jiaheng Li and Haoxiong Zhang and Wei Yao and Jonathan D. Denlinger and Yang Wu and Wenhui Duan and Shuyun Zhou},
  journal={arXiv: Materials Science},
SnSe, a group IV-VI monochalcogenide with layered crystal structure similar to black phosphorus, has recently attracted extensive interests due to its excellent thermoelectric properties and potential device applications. Experimental electronic structure of both the valence and conduction bands is critical for understanding the effects of hole versus electron doping on the thermoelectric properties, and to further reveal possible change of the band gap upon doping. Here, we report the… 
15 Citations

Figures from this paper

SnSe: Breakthrough or Not Breakthrough?
The simple binary semiconductor SnSe has not been for long considered as a promising thermoelectric material compared to PbSe. For this reason, its thermoelectric properties have been largely
Evidences for the exciton gas phase and its condensation in monolayer 1T-ZrTe2
Here we report a distinct correlated phase beyond the 2×2 CDW ground state emerging in epitaxially grown monolayer 1T-ZrTe 2 and its investigation by angle-resolved photoemission spectroscopy (ARPES)
High‐Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges
A thorough overview of aqueous synthesis, characterization, and thermoelectric performance in Tin selenide (SnSe) is provided, and an attempt to build the inherent links between the aQueous synthesis‐induced structural characteristics and the excellent thermoeLECTric performance is presented.
Phonon magic angle in two-dimensional puckered homostructures
The emergence of twistronics provides an unprecedented platform to modulate the band structure, resulting in exotic electronic phenomena ranging from ferromagnetism to superconductivity. However,
Doping-induced persistent spin helix with a large spin splitting in monolayer SnSe
Finding a new class of materials exhibiting very long spin lifetime is essential in development of energy saving spintronics, which is achievable by using a persistent spin helix (PSH) materials.
Oxidized Silicon Sulfide: Stability and Electronic Properties of a Novel Two-Dimensional Material
Isolated oxygen impurities and fully oxidized structures of four stable two-dimensional (2D) SiS structures are investigated by {\em ab initio} density functional calculations. Binding energies of
Long-lived quantum coherence in a two-level semiconductor quantum dot
In this paper, we present an analytical solution for the system of two-level semiconductor quantum dot. In addition, we discuss the rates of the photon radiative and phonon radiationless transitions


Photoemission study of the electronic structure of valence band convergent SnSe
IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance. The multiple close-to-degenerate (or "convergent") valence bands in the electronic band structure
Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe.
The band structure of SnSe is measured and highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across are found, exactly the band structure desired for efficient thermoelectric generation where SnSe has shown great promise.
Unexpected Large Hole Effective Masses in SnSe Revealed by Angle-Resolved Photoemission Spectroscopy.
It is shown with systematic angle resolved photoemission spectroscopy data that the low-lying electronic structures of undoped and hole-doped SnSe crystals exhibit noticeable temperature variation from 80 to 600 K.
Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals
N- type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites and it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type Sn Se single crystals.
Negative electronic compressibility and tunable spin splitting in WSe2.
It is shown that doping electrons at the surface of the prototypical strong spin-orbit TMD WSe2, akin to applying a gate voltage in a transistor-type device, induces a counterintuitive lowering of the surface chemical potential concomitant with the formation of a multivalley 2D electron gas (2DEG).
In-Plane Anisotropies of Polarized Raman Response and Electrical Conductivity in Layered Tin Selenide.
Single-crystal SnSe nanoplates (NPs) are synthesized using the chemical vapor deposition method, fully elucidating the anisotropic properties necessary for ultrathin SnSe in electronic, thermoelectric, and optoelectronic devices.
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets.
This Review describes how the tunable electronic structure of TMDs makes them attractive for a variety of applications, as well as electrically active materials in opto-electronics.
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States
A successful implementation through the use of the thallium impurity levels in lead telluride (PbTe) is reported, which results in a doubling of zT in p-type PbTe to above 1.5 at 773 kelvin.
Bandgap tuning in armchair MoS2 nanoribbon.
  • Q. Yue, Shengli Chang, Jingbo Li
  • Physics, Materials Science
    Journal of physics. Condensed matter : an Institute of Physics journal
  • 2012
It seems that the two fields exhibit different modulation effects on the gap, as the critical strength of perpendicular field for gap closure decreases with increasing number of layers, while thecritical strength of transverse field is almost independent of it.