# Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping

@article{Zhang2018WidelyTB,
title={Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping},
author={Kenan Zhang and Ke Deng and Jiaheng Li and Haoxiong Zhang and Wei Yao and Jonathan D. Denlinger and Yang Wu and Wenhui Duan and Shuyun Zhou},
journal={arXiv: Materials Science},
year={2018}
}
• Published 24 May 2018
• Materials Science
• arXiv: Materials Science
SnSe, a group IV-VI monochalcogenide with layered crystal structure similar to black phosphorus, has recently attracted extensive interests due to its excellent thermoelectric properties and potential device applications. Experimental electronic structure of both the valence and conduction bands is critical for understanding the effects of hole versus electron doping on the thermoelectric properties, and to further reveal possible change of the band gap upon doping. Here, we report the…
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