Widely Tunable III–V/Silicon Lasers for Spectroscopy in the Short-Wave Infrared

@article{Wang2019WidelyTI,
  title={Widely Tunable III–V/Silicon Lasers for Spectroscopy in the Short-Wave Infrared},
  author={Ruijun Wang and Bahawal Haq and Stephan Sprengel and Aditya Malik and Anton Vasiliev and Gerhard Boehm and Ieva Simonyte and Augustinas Vizbaras and Kristijonas Vizbaras and Joris Van Campenhout and Roel Baets and Markus-Christian Amann and Gunther Roelkens},
  journal={IEEE Journal of Selected Topics in Quantum Electronics},
  year={2019},
  volume={25},
  pages={1-12}
}
Integrating III–V gain material with silicon photonic integrated circuits enables the realization of advanced laser sources and full integrated systems for optical communication and sensing applications. The availability of III–V/silicon laser sources operating in the 2–2.5 μm short-wave infrared wavelength range is very valuable for spectroscopic sensing since many important industrial gases and blood glucose have absorption bands in this wavelength range. In this paper, first we present our… 
7 Citations
Compact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm.
TLDR
This work presents a hybrid silicon photonic wavelength-tunable diode laser with an operating range of 1881-1947 nm (66 nm) for the first time, providing good compatibility with the hollow-core photonic bandgap fiber and thulium-doped fiber amplifier.
Monolithic chalcogenide glass waveguide integrated interband cascaded laser
Mid-infrared photonic integrated circuits (PICs) that combine on-chip light sources with other optical components constitute a key enabler for applications such as chemical sensing, light detection,
High spectral purity GaSb-based blazed grating external cavity laser with tunable single-mode operation around 1940nm.
TLDR
A tunable GaSb-based blazed grating external cavity laser with high spectral purity and high output power single-mode operation around 1940nm with excellent comprehensive performance with a side mode suppression ratio (SMSR) over 50 dB with optical power exceeding 30 mW within a 70 nm tuning range.
Low noise, tunable silicon photonic lasers
Silicon photonics is a truly disruptive technology that has grown tremendously in the past two decades. It has now become a recognized leader in the next generation of consumer products. These future
Characterization of integrated waveguides by atomic-force-microscopy-assisted mid-infrared imaging and spectroscopy.
A novel spectroscopy technique to enable the rapid characterization of discrete mid-infrared integrated photonic waveguides is demonstrated. The technique utilizes lithography patterned polymer
High resolution, high channel count mid-infrared arrayed waveguide gratings in silicon.
TLDR
Arrayed waveguide gratings working in the 4.7 µm wavelength range are reported on silicon-on-insulator waveguides with 1500 nm thick silicon and 2 µm thick buried oxide layers, and the transmission spectrum shift as a function of temperature is found to be 0.22 nm/°C.

References

SHOWING 1-10 OF 41 REFERENCES
Broad wavelength coverage 2.3 µm III-V-on-silicon DFB laser array
Silicon photonics is a promising integrated-optics platform for optical communication and sensing applications. Integrating 2–3 μm wavelength widely tunable lasers on silicon photonic integrated
Widely tunable 23  μm III-V-on-silicon Vernier lasers for broadband spectroscopic sensing
Heterogeneously integrating III-V materials on silicon photonic integrated circuits has emerged as a promising approach to make advanced laser sources for optical communication and sensing
A III-V-on-Si ultra-dense comb laser
TLDR
A demonstration of a III-V-on-Si comb laser that can function as a compact, low-cost frequency comb generator after frequency stabilization and the use of low-loss passive silicon waveguides enables the integration of a long laser cavity, which enables the laser to be locked in the passive mode at a record-low 1 GHz repetition rate.
2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit.
TLDR
Heterogeneously integrated InP-based type-II quantum well Fabry-Perot lasers on a silicon waveguide circuit emitting in the 2.3 µm wavelength range indicate that the material system and heterogeneous integration method are promising to realize fully integrated III-V/silicon photonics spectroscopic sensors in the2 µm wavelengths.
Methane absorption spectroscopy on a silicon photonic chip
Infrared tunable diode-laser absorption spectroscopy (IR-TDLAS) is an enabling technology for trace-gas detection, with applications ranging from air-quality monitoring to medical diagnostics.
Heterogeneous Integration for Mid-infrared Silicon Photonics
Heterogeneous integration enables the construction of silicon (Si) photonic systems, which are fully integrated with a range of passive and active elements including lasers and detectors. Numerous
Heterogeneously integrated III–V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region
We report on 2.3x μm wavelength InP-based type-II distributed feedback (DFB) lasers heterogeneously integrated on a silicon photonics integrated circuit. In the devices, a III–V epitaxial layer stack
Compact GaSb/silicon-on-insulator 2.0x μm widely tunable external cavity lasers.
2.0x µm widely tunable external cavity lasers realized by combining a GaSb gain chip with a silicon photonics waveguide circuit for wavelength selection are demonstrated. Wavelength tuning over 58 nm
Narrow Spectral Linewidth Silicon Photonic Wavelength Tunable Laser Diode for Digital Coherent Communication System
We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier
Electrically pumped continuous-wave III–V quantum dot lasers on silicon
Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we
...
...