Wide memory window in graphene oxide charge storage nodes

@inproceedings{Wang2010WideMW,
  title={Wide memory window in graphene oxide charge storage nodes},
  author={Shuai Wang and Jing Pu and Daniel S. H. Chan and Byung Jin Cho and Kian Ping Loh},
  year={2010}
}
Solution-processable, isolated graphene oxide (GO) monolayers have been used as a charge trapping dielectric in TaN gate/Al2O3/isolated GO sheets/SiO2/p-Si memory device (TANOS). The TANOS type structure serves as memory device with the threshold voltage controlled by the amount of charge trapped in the GO sheet. Capacitance-Voltage hysteresis curves reveal a 7.5 V memory window using the sweep voltage of −5–14 V. Thermal reduction in the GO to graphene reduces the memory window to 1.4 V. The… CONTINUE READING

Citations

Publications citing this paper.
SHOWING 1-10 OF 22 CITATIONS